VLS Fiber growth process
    4.
    发明授权
    VLS Fiber growth process 失效
    VLS纤维生长过程

    公开(公告)号:US4911781A

    公开(公告)日:1990-03-27

    申请号:US311454

    申请日:1989-02-16

    IPC分类号: C30B11/12 C30B25/00

    摘要: A method for preparing substrates for VLS fiber producing reactions and a method for preparing SiC fibers by the VLS process. The first method includes the steps of forming an alcohol sol containing a fiber growth promoter material precursor, applying the sol to at least one surface of the substrate and drying the sol. More particularly, the steps can include forming a sol of colloidal hydrous metal oxide particles in a liquid, the metal oxide being a fiber growth promoter material precursor and the liquid being capable of dissolving a salt of the metal and of wetting the substrate surface as a sol, applying the sol to at least one surface of the substrate and drying the sol. The method for the production of SiC fibers includes the steps of applying to at least one surface of a non-metallic, high temperature resistant substrate a sol coating containing a SiC fiber growth promoter material precursor, drying the sol coating and contacting the substrate with silicon and carbon containing gases at a temperature of about 1300.degree. C. to about 1500.degree. C.

    摘要翻译: 一种用于制备VLS纤维生产反应的基材的方法和通过VLS方法制备SiC纤维的方法。 第一种方法包括形成含有纤维生长促进剂材料前体的醇溶胶的步骤,将该溶胶施加到基材的至少一个表面并干燥该溶胶。 更具体地,步骤可以包括在液体中形成胶体含水金属氧化物颗粒的溶胶,金属氧化物是纤维生长促进剂材料前体,并且液体能够溶解金属的盐并润湿基材表面作为 溶胶,将溶胶施加到基材的至少一个表面并干燥溶胶。 制造SiC纤维的方法包括以下步骤:向非金属耐高温基材的至少一个表面施加包含SiC纤维生长促进剂材料前体的溶胶涂层,干燥溶胶涂层并使基板与硅接触的步骤 和含碳气体的温度在约1300℃至约1500℃

    High surface area ceramics prepared from organosilane gels
    5.
    发明授权
    High surface area ceramics prepared from organosilane gels 失效
    高表面积陶瓷由有机硅烷凝胶制成

    公开(公告)号:US4818732A

    公开(公告)日:1989-04-04

    申请号:US27765

    申请日:1987-03-19

    IPC分类号: C04B38/00 C04B38/02

    CPC分类号: C04B38/0045

    摘要: High surface area open microporous, partially crystalline, partially amorphous, solid ceramic materials containing silicon carbide with or without silica with or without carbon may be prepared by controlled pyrolysis of (RSiO.sub.1.5).sub.n gels in an inert atmosphere. The silica and carbon content, surface area, and pore size and distribution may be altered by optional subsequent processing steps to selectively remove carbon and/or silica.

    摘要翻译: 含有或不含碳的二氧化硅的含有碳化硅的高表面积开放微孔,部分结晶,部分无定形的固体陶瓷材料可以通过在惰性气氛中(RSiO 1.5)n凝胶的受控热解制备。 二氧化硅和碳含量,表面积和孔径和分布可以通过任选的后续处理步骤改变,以选择性地除去碳和/或二氧化硅。

    LIMIS systems, devices and methods
    6.
    发明授权
    LIMIS systems, devices and methods 失效
    LIMIS系统,设备和方法

    公开(公告)号:US4656463A

    公开(公告)日:1987-04-07

    申请号:US487284

    申请日:1983-04-21

    摘要: This invention relates to LIMIS systems, devices and methods. Specifically, it relates to the attachment of passive transceivers which can be altered or coded, erased and recoded to various items as "tags", and the use of active transceivers of various types for Location, Identification, measurement of the Movement of, Inventory and analytical, control, guidance and sorting Systems (LIMIS) using and analyzing the information received from the items.The devices include at least one small unitary, passive transceiver (PT) and at least one active transceiver (AT) and where necessary, one or more repeater-relays and/or reflectors. The PT is attached to or embedded in the item to be identified. The PTs are encoded, decoded, identified, and located and/or their motion is detected and/or measured by the AT. The AT unit functions can be accomplished by one or more independent devices or a single device.

    摘要翻译: 本发明涉及LIMIS系统,装置和方法。 具体来说,它涉及被动收发器的附件,可以被改变或编码,擦除和重新编码为各种项目作为“标签”,以及使用各种类型的主动收发器用于定位,识别,测量运动,库存和 分析,控制,指导和分拣系统(LIMIS)使用和分析从项目收到的信息。 这些设备包括至少一个小型单一无源收发器(PT)和至少一个有源收发器(AT),并且在必要时还包括一个或多个中继器和/或反射器。 PT附加到或嵌入在要识别的项目中。 PT被编码,解码,识别和定位,和/或其运动由AT检测和/或测量。 AT单元功能可以由一个或多个独立设备或单个设备完成。