公开(公告)号：US20190103490A1

公开(公告)日：2019-04-04

申请号：US15720977

申请日：2017-09-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott WARRICK ,  Justin DOUGHERTY ,  Alexander BARR ,  Christian LARSEN ,  Marc L. TARABBIA ,  Ying YING

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/76

Abstract: A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.