公开(公告)号：US20250067934A1

公开(公告)日：2025-02-27

申请号：US18938928

申请日：2024-11-06

Applicant: CISCO TECHNOLOGY, INC.

Inventor： Li Chen ,  Long Chen ,  Christopher Doerr

IPC: G02B6/136 ,  G02B6/12 ,  G02B6/132

Abstract: In part, in one aspect, the disclosure relates to a method for passivating a waveguide of an optical circuit. The method includes etching a suspended waveguide in the optical circuit; the suspended waveguide having a top surface, a bottom surface, and side surfaces; and covering the top surface and side surfaces of the suspended waveguide with a passivation coating having a thickness that ranges from between about 10 nm to about 20 nm. In one embodiment, the method further includes removing one or more coatings from a portion of the optical circuit. The disclosure also relates to various passivated optical silicon circuit embodiments.

公开(公告)号：US20240241332A1

公开(公告)日：2024-07-18

申请号：US18155300

申请日：2023-01-17

Applicant: Cisco Technology, Inc.

Inventor： Long Chen ,  Qianfan Xu ,  Li Chen ,  Mark A. Webster

IPC: G02B6/42

CPC classification number: G02B6/4277

Abstract: A device and a method of fabricating the device are provided. The device includes an optical modulator formed in a dielectric material, a silicon substrate adjacent the dielectric material, and a metal shield formed in the dielectric material between the optical modulator and the silicon substrate. The metal shield blocks an electromagnetic field of a driving signal of the optical modulator from extending into the silicon substrate.

公开(公告)号：US20240361523A1

公开(公告)日：2024-10-31

申请号：US18140826

申请日：2023-04-28

Applicant: Cisco Technology, Inc.

Inventor： Long Chen ,  Gianlorenzo Masini

IPC: G02B6/122 ,  H01L31/105 ,  H01L31/18

CPC classification number: G02B6/122 ,  H01L31/105 ,  H01L31/1804 ,  G02B2006/12061 ,  G02B2006/12123

Abstract: In part, in one aspect, the disclosure relates to a photodiode. The photodiode may include a substrate; a semiconductor layer comprising an semiconductor material, the semiconductor layer disposed on the substrate and in communication with at least a region of the substrate, the semiconductor layer having a first side, a second side, and an upper surface, the semiconductor layer having a height; a semiconductor structure partially disposed on the upper surface, the semiconductor structure comprising at least one elongate portion that extends beyond the first side and along a portion of the upper surface of the semiconductor layer; and a metal contact that is in electrical connection with the elongate portion of the semiconductor structure.