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公开(公告)号:US11742451B2
公开(公告)日:2023-08-29
申请号:US17103792
申请日:2020-11-24
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Li Li , Prakash B. Gothoskar , Soha Namnabat
IPC: H01L31/18 , H01L31/0368 , H01L31/105 , H01L31/036
CPC classification number: H01L31/1812 , H01L31/036 , H01L31/03682 , H01L31/105 , H01L31/1808 , H01L31/1892
Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.
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公开(公告)号:US11619838B2
公开(公告)日:2023-04-04
申请号:US17302632
申请日:2021-05-07
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Vipulkumar K. Patel , Prakash B. Gothoskar , Ming Gai Stanley Lo
IPC: G02F1/025
Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.
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公开(公告)号:US11754784B2
公开(公告)日:2023-09-12
申请号:US17447153
申请日:2021-09-08
Applicant: Cisco Technology, Inc.
Inventor: Tao Ling , Shiyi Chen , Xunyuan Zhang , Prakash B. Gothoskar
CPC classification number: G02B6/1228 , G02B6/0026 , G02B6/1223 , G02B6/124
Abstract: Embodiments presented in this disclosure generally relate to an optical device having a grating coupler for redirection of optical signals. One embodiment includes a grating coupler. The grating coupler generally includes a waveguide layer, a thickness of a waveguide layer portion of the waveguide layer being tapered, the thickness defining a direction, and a grating layer disposed above the waveguide layer and perpendicular to the direction where at least a grating layer portion of the grating layer overlaps the waveguide layer portion of the waveguide layer along the direction. Some embodiments are directed to grating coupler implemented with material layers above and a reflector layer below a grating layer, facilitating redirection and confinement of light that improves coupling loss and bandwidth. The material layers and reflector layer above and below the grating layer may be implemented with or without the waveguide layer being tapered.
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公开(公告)号:US11022757B1
公开(公告)日:2021-06-01
申请号:US16696957
申请日:2019-11-26
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Shiyi Chen , Tao Ling , Prakash B. Gothoskar
Abstract: Embodiments herein describe a photonic platform where an AR coating is disposed between an optical grating and a semiconductor substrate. In one embodiment, the optical grating is disposed within an insulative layer. A first side of the insulative layer provides an optical interface where an external optical source can transmit an optical signal into, or a receive an optical signal from, the grating. A second, opposite side of the insulative layer contacts the AR coating. When the external optical source transmits light through the first side of the insulative layer, some of the light passes through the grating and reaches the AR coating. The AR coating prevents this light from being reflected back to the grating by the semiconductor layer which can cause interference that varies the coupling efficiency of the grating.
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公开(公告)号:US11036069B2
公开(公告)日:2021-06-15
申请号:US16356982
申请日:2019-03-18
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Vipulkumar K. Patel , Prakash B. Gothoskar , Ming Gai Stanley Lo
IPC: G02F1/025
Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.
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6.
公开(公告)号:US12276565B2
公开(公告)日:2025-04-15
申请号:US18297412
申请日:2023-04-07
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Ravi S. Tummidi , Tony P. Polous , Mark A Webster
Abstract: Electrical test of optical components via metal-insulator-semiconductor capacitor structures is provided via a plurality of optical devices including a first material embedded in a second material, wherein each optical device is associated with a different thickness range of a plurality of thickness ranges for the first material; a first capacitance measurement point including the first material embedded in the second material; and a second capacitance measurement point including a region from which the first material has been replaced with the second material.
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公开(公告)号:US11906824B2
公开(公告)日:2024-02-20
申请号:US18177497
申请日:2023-03-02
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Vipulkumar K. Patel , Prakash B. Gothoskar , Ming Gai Stanley Lo
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2202/104 , G02F2202/105
Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.
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公开(公告)号:US11860417B2
公开(公告)日:2024-01-02
申请号:US16565203
申请日:2019-09-09
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang
CPC classification number: G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142
Abstract: Aspects described herein include a method of fabricating an optical apparatus. The method comprises etching a plurality of trenches partly through a first optical waveguide formed in a first semiconductor layer, wherein a first ridge is formed in the first optical waveguide between adjacent trenches of the plurality of trenches. The method further comprises conformally depositing a spacer layer above the first optical waveguide, wherein spacers are formed on sidewalls of each trench of the plurality of trenches. The method further comprises etching through the spacer layer to expose a respective bottom of each trench, wherein, for each respective bottom, a width of the respective bottom is defined by the spacers formed on the sidewalls of the trench corresponding to the respective bottom. The method further comprises depositing a first dielectric layer above the first optical waveguide, wherein dielectric material extends to the respective bottom of each trench.
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9.
公开(公告)号:US11686648B2
公开(公告)日:2023-06-27
申请号:US17443280
申请日:2021-07-23
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Ravi S. Tummidi , Tony P. Polous , Mark A. Webster
CPC classification number: G01M11/30 , G02B6/12007 , G02B2006/12061 , G02B2006/12145 , G02B2006/12164
Abstract: Electrical test of optical components via metal-insulator-semiconductor capacitor structures is provided via a plurality of optical devices including a first material embedded in a second material, wherein each optical device is associated with a different thickness range of a plurality of thickness ranges for the first material; a first capacitance measurement point including the first material embedded in the second material; and a second capacitance measurement point including a region from which the first material has been replaced with the second material.
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公开(公告)号:US10969546B2
公开(公告)日:2021-04-06
申请号:US16198251
申请日:2018-11-21
Applicant: Cisco Technology, Inc.
Inventor: Xunyuan Zhang , Vipulkumar K. Patel , Prakash B. Gothoskar
Abstract: A method of fabricating an optical apparatus comprises forming a first waveguide on a dielectric substrate. The first waveguide extends in a direction of an optical path. The first waveguide comprises a monocrystalline semiconductor material and is doped with a first conductivity type. The method further comprises depositing a first dielectric layer on the first waveguide, etching a first opening that extends at least partly through the first dielectric layer, and forming a second waveguide at least partly overlapping the first waveguide along the direction. The second waveguide is doped with a different, second conductivity type. Forming the second waveguide comprises depositing a monocrystalline semiconductor material on the first dielectric layer, whereby the first opening is filled with the deposited monocrystalline semiconductor material.
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