专利检索 ap:("Clinton Chao" OR "C.S. Hsu" OR "Mark Shane Peng" OR "Szu Wei Lu" OR "Tjandra Winata Karta") AND inv:"C.S. Hsu" 第 1 页

1.

发明申请
Electromagnetic shielding using through-silicon vias 有权

公开(公告)号：US20080073747A1

公开(公告)日：2008-03-27

申请号：US11525603

申请日：2006-09-22

申请人： Clinton Chao , C.S. Hsu , Mark Shane Peng , Szu Wei Lu , Tjandra Winata Karta

发明人： Clinton Chao , C.S. Hsu , Mark Shane Peng , Szu Wei Lu , Tjandra Winata Karta

IPC分类号： H01L29/00 , H01L21/331

CPC分类号： H01L25/0657 , H01L21/76 , H01L21/823481 , H01L23/481 , H01L23/585 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/014 , H01L2924/013 , H01L2924/00014

摘要： An isolation structure for electromagnetic interference includes a semiconductor substrate, a first integrated circuit in the semiconductor substrate, a second integrated circuit in the semiconductor substrate, and an isolation structure in a direct path between the first and the second integrated circuits, wherein the isolation structure comprises a through-silicon via.