公开(公告)号：US07547952B2

公开(公告)日：2009-06-16

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

IPC分类号： H01L29/72 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L21/10 ,  H01L21/26

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。