Method for forming SIO2 by chemical vapor deposition at room temperature
    10.
    发明授权
    Method for forming SIO2 by chemical vapor deposition at room temperature 失效
    在室温下通过化学气相沉积形成SIO2的方法

    公开(公告)号:US06818250B2

    公开(公告)日:2004-11-16

    申请号:US09896955

    申请日:2001-06-29

    IPC分类号: C23C1640

    摘要: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to

    摘要翻译: 使用由氨或路易斯碱催化的化学气相沉积(CVD)反应在室温下沉积二氧化硅(SiO 2)膜。 SiO2膜生长通过水和某些硅前体的反应完成。 这些反应的实例包括SiCl 4 + 2H 2 O-→SiO 2 + 4HCl或Si(OR)4 + 2H 2 O-> SiO 2 + 4ROH反应,并用氨(NH 3)或其它路易斯碱催化。 NH3催化剂将SiO 2 CVD的所需温度从> 900K降低到313-333K,并将有效SiO 2 CVD所需的SiCl 4和H 2 O压力从几Tor降低到<500MTORR。