公开(公告)号：US20190198125A1

公开(公告)日：2019-06-27

申请号：US16208841

申请日：2018-12-04

申请人： Cypress Semiconductor Corporation

发明人： James Pak ,  Shivananda Shetty ,  Yoram Betser ,  Amichai Givant ,  Jonas Neo ,  Pawan Singh ,  Stefano Amato ,  Cindy Sun ,  Amir Rochman

IPC分类号： G11C16/34 ,  G11C16/28

摘要： A non-volatile memory device and methods for operating the same are provided. The memory device may have multiple complementary memory cells. The method of blank check includes detecting a state value of each of the true and complementary transistors, generating an upper state value, Wherein a first predetermined amount of the true and complementary transistors have greater state values than the upper state value, generating a lower state value, wherein a second predetermined amount of the true and complementary transistors have less state values than the lower state value, generating a state value range based on a difference between the upper state value and the lower state value, and comparing the state value range to a threshold value to determine whether the plurality of complementary memory cells is in a blank state or a non-blank state. Other embodiments are also disclosed herein.

公开(公告)号：US10679712B2

公开(公告)日：2020-06-09

申请号：US16208841

申请日：2018-12-04

申请人： Cypress Semiconductor Corporation

发明人： James Pak ,  Shivananda Shetty ,  Yoram Betser ,  Amichai Givant ,  Jonas Neo ,  Pawan Singh ,  Stefano Amato ,  Cindy Sun ,  Amir Rochman

IPC分类号： G11C16/04 ,  G11C16/34 ,  G11C16/28 ,  G11C11/56

摘要： A non-volatile memory device and methods for operating the same are provided. The memory device may have multiple complementary memory cells. The method of blank check includes detecting a state value of each of the true and complementary transistors, generating an upper state value, Wherein a first predetermined amount of the true and complementary transistors have greater state values than the upper state value, generating a lower state value, wherein a second predetermined amount of the true and complementary transistors have less state values than the lower state value, generating a state value range based on a difference between the upper state value and the lower state value, and comparing the state value range to a threshold value to determine whether the plurality of complementary memory cells is in a blank state or a non-blank state. Other embodiments are also disclosed herein.