公开(公告)号：US20100270645A1

公开(公告)日：2010-10-28

申请号：US12763433

申请日：2010-04-20

申请人： DAVID ROSS MCGREGOR ,  Cheong-Wo Hunter Chan ,  Lynne E. Dellis ,  Fuhan Liu ,  Deepukumar M. Nair ,  Venkatesh Sundaram

发明人： DAVID ROSS MCGREGOR ,  Cheong-Wo Hunter Chan ,  Lynne E. Dellis ,  Fuhan Liu ,  Deepukumar M. Nair ,  Venkatesh Sundaram

IPC分类号： H01L29/86 ,  H01L21/768 ,  H01L21/50 ,  H01L23/522

CPC分类号： H05K1/162 ,  H05K3/025 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09309 ,  H05K2201/09481 ,  H05K2201/09518 ,  H05K2201/09718 ,  H05K2201/09763 ,  H05K2201/10674 ,  H05K2203/1126

摘要： Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.

摘要翻译： 提供了包括通过堆积层附着到印刷线路板芯的至少一个薄膜电容器的半导体封装，其中薄膜电容器的第一电极包括薄镍箔，薄膜电容器的第二电极 包括铜电极，并且在镍箔上形成铜层。 薄膜电容器和半导体器件之间的互连提供了将电荷转移到半导体器件和从半导体器件传输电荷的低电感路径。 还提供了制造这种半导体封装的方法。