公开(公告)号：US20240355808A1

公开(公告)日：2024-10-24

申请号：US18206822

申请日：2023-06-07

申请人： DB HiTek Co., Ltd.

发明人： Jong Min KIM ,  Young Sang SON ,  Young Chul KIM

IPC分类号： H01L27/02

CPC分类号： H01L27/0259

摘要： A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region surrounding the first region, a collector extending in a first direction in the first region of the substrate, an emitter that is spaced apart from the collector in a second direction and extends in the first direction, in the first region of the substrate, a floating region that is disposed between the collector and the emitter and extends in the first direction, in the first region of the substrate, a first device separation region between the floating region and the collector in the first region of the substrate, a second device separation region between the floating region and the emitter in the first region of the substrate and a base disposed in the second region of the substrate, wherein the floating region is not connected to an element including a conductor.

公开(公告)号：US20240290772A1

公开(公告)日：2024-08-29

申请号：US18314224

申请日：2023-05-09

申请人： DB HiTek Co., Ltd.

发明人： Jong Min KIM ,  Young Sang SON

IPC分类号： H01L27/02 ,  H01L29/735

CPC分类号： H01L27/0248 ,  H01L29/735

摘要： Disclosed are an ESD protection device to mitigate performance degradation due to operational instability by ensuring protection against ESD events and stress. The ESD protection device includes an N-type buried layer including a first dopant type in a semiconductor substrate, a deep well (DNW) including a first dopant type on the N-type buried layer, a first doped region including a first dopant type on the deep well, a second doped region including a first dopant type and a third doped region including a second dopant type, spaced apart from the first doped region, a base in the first doped region, and a multi-finger structure including emitter fingers in the second doped region and collector fingers in the third doped region, and a base moat comprising a base metal connecting individual ones of the emitter fingers to each other.

公开(公告)号：US20230352472A1

公开(公告)日：2023-11-02

申请号：US18157072

申请日：2023-01-20

申请人： DB HiTek Co., Ltd.

发明人： Jong Min KIM

IPC分类号： H01L27/02

CPC分类号： H01L27/0248

摘要： Disclosed are bidirectional ESD protection devices capable of solving a breakdown voltage mismatch (BV mismatch) phenomenon while securing operation stability by providing a high breakdown voltage. The bidirectional ESD protection device includes an isolation region between an anode region and a cathode region, and the anode region and the cathode region may face each other with the isolation region in between. Accordingly, the bidirectional ESD protection device realizes high-voltage bidirectional characteristics without adding a mask, is minimized or reduced in size, and solves problems such as a breakdown voltage mismatch and instability.

公开(公告)号：US20230290795A1

公开(公告)日：2023-09-14

申请号：US18118541

申请日：2023-03-07

申请人： DB HITEK CO., LTD.

发明人： Man Lyun HA ,  Jong Min KIM ,  Dong Jun OH

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N25/713

CPC分类号： H01L27/14614 ,  H01L27/14818 ,  H04N25/713

摘要： An image sensor includes a charge accumulation region having a first conductivity type and disposed in a substrate, a charge storage region having the first conductivity type and disposed in the substrate to be laterally spaced apart from the charge accumulation region, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, a first well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region, and a second well region having the second conductivity type and disposed below a portion of one side of the first well region adjacent to a neighboring image cell.

公开(公告)号：US20210118923A1

公开(公告)日：2021-04-22

申请号：US16949240

申请日：2020-10-21

申请人： DB HITEK CO., LTD.

发明人： Dong Jun OH ,  Jong Min KIM ,  Man Lyun HA ,  Jae Hyun KIM

IPC分类号： H01L27/146 ,  H04N5/355

摘要： An image sensor includes a substrate having a first conductivity type, a first charge accumulation region disposed in the substrate and having a second conductivity type, a second charge accumulation region connected with the first charge accumulation region, having the second conductivity type and extending downward from an edge of the first charge accumulation region, a pinning region disposed on the first charge accumulation region and having the first conductivity type, a floating diffusion region spaced laterally from the pinning region, a channel region disposed between the pinning region and the floating diffusion region, and a gate structure disposed on the channel region.

公开(公告)号：US20230008050A1

公开(公告)日：2023-01-12

申请号：US17810074

申请日：2022-06-30

申请人： DB HITEK CO., LTD.

发明人： Jong Min KIM ,  Dong Jun OH

IPC分类号： H01L27/146

摘要： An image sensor includes at least one image cell having a photodiode disposed in a substrate, a charge storage region disposed in the substrate to be spaced apart from the photodiode, a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region, and a dummy pattern disposed on the substrate and configured to inhibit light from being introduced into the charge storage region from an adjacent image cell.

公开(公告)号：US20230005974A1

公开(公告)日：2023-01-05

申请号：US17810077

申请日：2022-06-30

申请人： DB HITEK CO., LTD.

发明人： Dong Jun OH ,  Jong Min KIM

IPC分类号： H01L27/146

摘要： An image sensor includes a charge accumulation region disposed in a substrate and having a first conductivity type, a charge storage region disposed in the substrate to be spaced apart from the charge accumulation region and having the first conductivity type, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, and a well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region.

公开(公告)号：US20240250168A1

公开(公告)日：2024-07-25

申请号：US18311102

申请日：2023-05-02

申请人： DB HiTek Co., Ltd.

发明人： Jong Min KIM ,  Geum Ho AHN

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/404 ,  H01L29/42324 ,  H01L29/66681

摘要： Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same enabling more effective integration through improvement of breakdown voltage (BV) characteristics during device turn-on and/or turn-off and consequent improvement of specific on-resistance (Rsp) characteristics by forming or including a floating gate and/or a connection structure on a substrate, between a gate electrode and a drain.

公开(公告)号：US20230142541A1

公开(公告)日：2023-05-11

申请号：US18049053

申请日：2022-10-24

申请人： DB HiTek Co., Ltd.

发明人： Ji Eun LEE ,  Kwang Young KO ,  Jong Min KIM

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/788

CPC分类号： H01L29/7811 ,  H01L29/0865 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/7889 ,  H01L29/66712 ,  H01L29/1095

摘要： Disclosed is a superjunction semiconductor device and a method for manufacturing the same and, more particularly, to a superjunction semiconductor device and a method for manufacturing the same seeking to improve a switching speed and thus to improve switching characteristics by reducing a gate-to-drain parasitic capacitance (Cgd) and/or configuring a gate electrode as a floating dummy gate.

公开(公告)号：US20230061514A1

公开(公告)日：2023-03-02

申请号：US17819600

申请日：2022-08-12

申请人： DB HiTek Co., Ltd.

发明人： Jae Hyun KIM ,  Ji Eun LEE ,  Young Kwon KIM ,  Jong Min KIM

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/417

摘要： Disclosed are a superjunction semiconductor device and a method of manufacturing the same. More particularly, the present disclosure relates to a superjunction semiconductor device and a method of manufacturing the same including one or more first conductivity type pillars in a ring region at least partially extending along a first direction, whereby it is possible to reduce electric field concentrations at a surface of the device, and thereby improve breakdown voltage characteristics and achieve an even or more even electric field distribution.