公开(公告)号：US20240079492A1

公开(公告)日：2024-03-07

申请号：US18506290

申请日：2023-11-10

Applicant: DENSO CORPORATION

Inventor： Atsuya AKIBA ,  Yuichi TAKEUCHI ,  Kazuki ARAKAWA ,  Yusuke HAYAMA ,  Yasushi URAKAMI ,  Shinichiro MIYAHARA ,  Tomoo MORINO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608

Abstract: A semiconductor device includes a second deep layer between a first deep layer and first current distribution layer and a base region in an active region and in a part of an inactive region adjacent to the active region. The second deep layer has a second stripe portion including lines connecting to the base region and the first deep layer. The semiconductor device further includes a second current distribution layer between the first current distribution layer and the base region and arranged between the lines of the second stripe portion. The first deep layer has a first stripe portion including a plurality of lines, and each line has an end portion connecting to a frame-shaped portion and an inner portion on an inner side of the end portion. The width of the end portion is equal to or greater than the inner portion.