公开(公告)号：US10103255B2

公开(公告)日：2018-10-16

申请号：US15544898

申请日：2016-02-22

Applicant: DENSO CORPORATION

Inventor： Masakiyo Sumitomo ,  Masahiro Ogino ,  Yukihiro Kato

IPC: H01L29/739 ,  H01L23/485 ,  H01L29/78

Abstract: A semiconductor device includes: a semiconductor substrate having a drift layer; a base layer and a carrier storage layer over the drift layer; a collector layer on the drift layer opposite to the base layer; multiple trenches penetrating the base layer and the carrier storage layer and reaching the drift layer; a gate electrode on an insulation film in each trench; and an emitter region in a surface portion of the base layer contacting each trench. A thickness of at least a portion of a part of the gate insulation film on a sidewall of each trench on a collector layer side from a peak position, at which the impurity concentration of the carrier storage layer is highest, is thicker than a thickness of another part of the gate insulation film on the sidewall of an opening portion side of the trench from the peak position.

公开(公告)号：US09634095B2

公开(公告)日：2017-04-25

申请号：US14759823

申请日：2013-12-23

Applicant: DENSO CORPORATION

Inventor： Seigo Oosawa ,  Yutaka Tomatsu ,  Masahiro Ogino ,  Tomomi Oobayashi

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06 ,  H01L29/739

CPC classification number: H01L29/1095 ,  H01L29/0634 ,  H01L29/086 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813

Abstract: In a semiconductor device, a first conductivity-type first semiconductor region that abuts on a side surface of a contact trench adjacent to an opening portion of the contact trench, and has a higher impurity concentration than that of a second semiconductor layer is formed. Also, a second conductivity-type second semiconductor region that abuts on a bottom surface of the contact trench and a side surface of the contact trench adjacent to the bottom surface of the contact trench, and has a higher impurity concentration than that of a first semiconductor layer is formed. A first electrode that is connected electrically with the first semiconductor region and the second semiconductor region is disposed in the contact trench. Even when the semiconductor device is miniaturized by reducing the width of the contact trench, a breakage of the semiconductor device when switched from an on-state to an off-state is reduced.