Abstract:
Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.
Abstract:
A composite material includes a metal material having conductivity and an oxidation inhibitor mixed with the metal material. The oxidation inhibitor forms a complex with the metal material to exert a resistance to oxidation of the metal material. For example, the composite material is formed on a surface of a base material as a plating material. As another example, the composite material is plated on a surface of an electrode.