公开(公告)号：US20170327943A1

公开(公告)日：2017-11-16

申请号：US15531197

申请日：2015-11-24

Applicant: DENSO CORPORATION

Inventor： Kazuaki KAFUKU ,  Yukihiro SANO ,  Takayuki HAYASHI ,  Manabu TOMISAKA ,  Ryonosuke TERA

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/42 ,  F01N13/16

CPC classification number: C23C16/02 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/42 ,  C23C16/45529 ,  C23C16/45555 ,  F01N13/08 ,  F01N13/16 ,  F01N13/18 ,  F01N2510/08

Abstract: A coating structure includes a base made of metal, a foundation layer provided on the base, and an insulation film provided on the foundation layer. The insulation film includes a plurality of layers, each layer of the plurality of layers being different in material, the plurality of layers being layered alternately with each other. The foundation layer is provided by a method other than a coating method using a surface chemical reaction occurring on the base, and a part of the foundation layer in contact with the base is amorphous. According to this, when a foreign material adheres on the base, the foreign material can be covered by the foundation layer. Since the insulation film is provided on the foundation layer, forming defects of the insulation film caused by the foreign material can be limited.

公开(公告)号：US20220384185A1

公开(公告)日：2022-12-01

申请号：US17750450

申请日：2022-05-23

Applicant: DENSO CORPORATION

Inventor： Kazufumi AOKI ,  Naoki MARUNO ,  Bahman SOLTANI ,  Yuya KATO ,  Kyohei KOTAKE ,  Shinji MUKOTA ,  Manabu TOMISAKA ,  Yasuo ISHIHARA ,  Shusaku NAKAZAWA ,  Tetsuji YAMAGUCHI

IPC: H01L21/02 ,  H01L21/304

Abstract: Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.