公开(公告)号：US11990391B2

公开(公告)日：2024-05-21

申请号：US17475102

申请日：2021-09-14

Applicant: DENSO CORPORATION

Inventor： Masayoshi Nishihata ,  Shota Yoshikawa

IPC: H01L23/492 ,  H01L23/31 ,  H01L23/367 ,  H01L25/07

CPC classification number: H01L23/492 ,  H01L23/3107 ,  H01L23/367 ,  H01L25/072

Abstract: In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.