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    Power conversion apparatus
    2.
    发明授权
    Power conversion apparatus 有权

    公开(公告)号：US11973433B2

    公开(公告)日：2024-04-30

    申请号：US17690170

    申请日：2022-03-09

    Applicant: DENSO CORPORATION

    Inventor： Hiromi Ichijyo ,  Yuu Yamahira ,  Kazuya Takeuchi ,  Masanori Sakata ,  Masayoshi Nishihata

    IPC: H02M7/00 ,  H01L23/31 ,  H01L23/528 ,  H01L25/18 ,  H02M7/5387 ,  H02P27/06

    CPC classification number: H02M7/003 ,  H01L23/3107 ,  H01L23/5286 ,  H01L25/18 ,  H02M7/5387 ,  H02P27/06

    Abstract: A first module includes a first switch having a first electrode and a second electrode; a second switch having a third electrode and a fourth electrode; a second internal bus bar connecting the second electrode with the third electrode; and a first resin member encapsulating those components. A second module with includes a third switch having a fifth electrode and a sixth electrode; a fourth switch having a seventh electrode and an eighth electrode; a fifth internal bus bar connecting the sixth electrode with the seventh electrode; and a second resin member encapsulating those components. At least one of a first terminal of the second internal bus bar exposed from the first resin member and a second terminal of the fifth internal bus bar exposed from the second resin member extends toward the other and are directly joined with each other.

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11990391B2

    公开(公告)日：2024-05-21

    申请号：US17475102

    申请日：2021-09-14

    Applicant: DENSO CORPORATION

    Inventor： Masayoshi Nishihata ,  Shota Yoshikawa

    IPC: H01L23/492 ,  H01L23/31 ,  H01L23/367 ,  H01L25/07

    CPC classification number: H01L23/492 ,  H01L23/3107 ,  H01L23/367 ,  H01L25/072

    Abstract: In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10103090B2

    公开(公告)日：2018-10-16

    申请号：US15123794

    申请日：2015-01-15

    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

    Inventor： Takuya Kadoguchi ,  Takahiro Hirano ,  Takanori Kawashima ,  Keita Fukutani ,  Tomomi Okumura ,  Masayoshi Nishihata

    IPC: H01L23/495 ,  H01L23/433 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

    Abstract: The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10985636B2

    公开(公告)日：2021-04-20

    申请号：US16395481

    申请日：2019-04-26

    Applicant: DENSO CORPORATION

    Inventor： Masayoshi Nishihata ,  Nobumasa Ueda ,  Hiroki Kiyose

    IPC: H02K11/33 ,  H02K3/50 ,  H01L23/50 ,  H01L25/07 ,  H01L23/367 ,  H01L25/18 ,  H02M7/48

    Abstract: A semiconductor device includes: a plurality of control modules that controls a rotating electric machine. Each control module includes at least two sets of arms, each set including high-side and low-side switching elements that provide an inverter. A plurality of arms of each control module are coupled in parallel to each other with respect to a bus bar coupled to one power source. Each control module includes a metal plate on which the high-side and low-side switching elements are mounted, and mediates an electric coupling with the power source. Each metal plate includes a first metal plate on which one set of arms is disposed, a second metal plate on which another set of arms is disposed, and a coupling plate that couples the first and second metal plates.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10797569B2

    公开(公告)日：2020-10-06

    申请号：US16394473

    申请日：2019-04-25

    Applicant: DENSO CORPORATION

    Inventor： Masayoshi Nishihata ,  Nobumasa Ueda ,  Hiroki Kiyose

    IPC: H02K11/33 ,  H01L23/367 ,  H01L23/50 ,  H01L25/07 ,  H02K3/50 ,  H02M7/48

    Abstract: A semiconductor device includes: a plurality of control modules to control a rotating electric machine. The plurality of control modules are circularly arranged around a rotary shaft of the rotating electric machine. Each control module includes at least one switching element supplied with a current from a bus bar coupled to a power source. The at least one switching element in one of the control modules under a structural condition of arrangement has a lower resistance than another switching element.

    Power conversion apparatus
    9.
    发明授权
    Power conversion apparatus 有权

    公开(公告)号：US11973432B2

    公开(公告)日：2024-04-30

    申请号：US17690141

    申请日：2022-03-09

    Applicant: DENSO CORPORATION

    Inventor： Hiromi Ichijyo ,  Yuu Yamahira ,  Kazuya Takeuchi ,  Masanori Sakata ,  Masayoshi Nishihata

    IPC: H02M7/00 ,  H01L23/31 ,  H01L23/528 ,  H01L25/18 ,  H02M7/5387 ,  H02P27/06

    CPC classification number: H02M7/003 ,  H01L23/3107 ,  H01L23/5286 ,  H01L25/18 ,  H02M7/5387 ,  H02P27/06

    Abstract: First switches include first electrodes, which are mutually connected with each other via a first internal bus bar, and second electrodes, which are mutually connected with each other via a second internal bus bar. A first resin member encapsulates the first switches and the first and second internal bus bars. Second switches include third electrodes, which are mutually connected with each other via a third internal bus bar, and fourth electrodes, which are mutually connected with each other via a fourth internal bus bar. A second resin member that encapsulates the second switches and the third and fourth internal bus bars. The second module is arranged alongside with the first module. The second internal bus bar and the third internal bus bar are partially exposed from the first resin member and the second resin member, respectively, and are directly joined with each other.

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