公开(公告)号：US09711638B2

公开(公告)日：2017-07-18

申请号：US15039505

申请日：2014-11-25

Applicant: DENSO CORPORATION

Inventor： Kazuhiro Oyama ,  Toshiharu Makino ,  Masahiko Ogura ,  Hiromitsu Kato ,  Daisuke Takeuchi ,  Satoshi Yamasaki ,  Norio Tokuda ,  Takao Inokuma ,  Takuma Minamiyama

IPC: H01L21/04 ,  H01L29/78 ,  H01L29/47 ,  H01L29/872 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7813 ,  H01L29/1602 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7827 ,  H01L29/7839 ,  H01L29/872

Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a δ dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.