公开(公告)号：US20200083183A1

公开(公告)日：2020-03-12

申请号：US16562531

申请日：2019-09-06

Applicant: DENSO CORPORATION

Inventor： Toshihiko TAKAHATA ,  Hiroo ANAN

IPC: H01L23/66 ,  H01L23/29 ,  H01L29/93 ,  G01S7/03

Abstract: An electronic component includes: a variable capacitance element; a substrate that has the variable capacitance element; a connection pattern that is electrically connected to the variable capacitance element; and a sealing member that has permittivity lower than that of the substrate and has insulation resistance higher than that of the substrate. At least a part of the connection pattern is disposed on an outer surface of the sealing member.

公开(公告)号：US20180024159A1

公开(公告)日：2018-01-25

申请号：US15549421

申请日：2016-02-01

Applicant: DENSO CORPORATION

Inventor： Toshihiko TAKAHATA ,  Eiichi TAKETANI

IPC: G01P15/08 ,  H01L29/84 ,  H01L23/02

CPC classification number: G01P15/08 ,  B81B2203/053 ,  G01P15/0802 ,  G01P2015/0828 ,  H01L23/02 ,  H01L29/84

Abstract: A method for manufacturing a semiconductor device includes: preparing a first substrate; forming a metal film having a Ti layer as the most outermost surface on one surface of the first substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a first pad portion; preparing a second substrate; forming on one surface of the second substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a second pad portion; vacuum annealing the first substrate and the second substrate to remove an oxide film formed on the Ti layer in the first pad portion and the second pad portion; and bonding the first pad portion and the second pad portion together.

公开(公告)号：US20150357551A1

公开(公告)日：2015-12-10

申请号：US14722645

申请日：2015-05-27

Applicant: DENSO CORPORATION ,  TOHOKU UNIVERSITY ,  National University Corporation Chiba University

Inventor： Akihiko TESHIGAHARA ,  Toshihiko TAKAHATA ,  Takao IWAKI ,  Shuji TANAKA ,  Masayoshi ESASHI ,  Kenya HASHIMOTO

IPC: H01L41/047 ,  G01N29/04

CPC classification number: G01L9/0025 ,  G01L9/0041 ,  G01N29/2462 ,  G01N2291/02827 ,  G01N2291/02872 ,  G01N2291/0423

Abstract: A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Abstract translation: 表面声波（SAW）传感器包括表面声波材料和梳齿电极。 表面声波材料将被布置在表面声波材料被物理量如应力扭曲的地方。 梳齿电极布置在表面声波材料的表面上，以激发表面声波材料的表面声波。 表面声波材料具有布置在蓝宝石板表面上的蓝宝石板和ScAlN膜。