公开(公告)号：US20140070271A1

公开(公告)日：2014-03-13

申请号：US14077510

申请日：2013-11-12

Applicant: Denso Corporation

Inventor： Shigeki TAKAHASHI ,  Norihito TOKURA ,  Satoshi SHIRAKI ,  Youichi ASHIDA ,  Akio NAKAGAWA

IPC: H01L29/739

CPC classification number: H01L29/7393 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/7394

Abstract: A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.

Abstract translation: 横向绝缘栅双极晶体管包括包括漂移层，集电极区域，沟道层，发射极区域，栅极绝缘层，栅电极，集电极，发射极和阻挡层的半导体衬底。 阻挡层沿着集电极区域的两侧设置，并且位于比通道层的底部更深的深度。 阻挡层的杂质浓度高于漂移层的杂质浓度。 阻挡层具有靠近集电极区域的第一端和远离集电极区域的第二端。 第一端位于沟道层和集电极区之间，第二端位于沟道层的底部。

公开(公告)号：US20190214346A1

公开(公告)日：2019-07-11

申请号：US16355917

申请日：2019-03-18

Applicant: DENSO CORPORATION

Inventor： Youichi ASHIDA ,  Tsuyoshi FUJIWARA

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film, The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film, The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

公开(公告)号：US20130168730A1

公开(公告)日：2013-07-04

申请号：US13719389

申请日：2012-12-19

Applicant: DENSO CORPORATION

Inventor： Youichi ASHIDA ,  Shigeki TAKAHASHI

IPC: H01L29/739

CPC classification number: H01L29/7394 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/47 ,  H01L29/66325 ,  H01L29/7393

Abstract: A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of the drift layer, a second conductivity type channel layer formed in the surface portion of the drift layer, a first conductivity type emitter region formed in a surface portion of the channel layer, and a hole stopper region formed in the drift layer and located between the collector region and the emitter region. Holes are injected from the collector region into the drift layer and flow toward the emitter region through a hole path. The hole stopper region blocks a flow of the holes and narrows the hole path to concentrate the holes.

Abstract translation: 具有横向绝缘栅双极晶体管的半导体器件包括第一导电型漂移层，形成在漂移层的表面部分中的第二导电型集电极区，形成在漂移层的表面部分中的第二导电类型沟道层， 形成在沟道层的表面部分中的第一导电型发射极区域和形成在漂移层中并且位于集电极区域和发射极区域之间的空穴停止区域。 孔从集电区域注入漂移层，并通过孔路流向发射极区域。 孔停止区域阻挡孔的流动并使孔径变窄以集中孔。