公开(公告)号：US20230037409A1

公开(公告)日：2023-02-09

申请号：US17972945

申请日：2022-10-25

Applicant: DENSO CORPORATION

Inventor： Masanori MIYATA ,  Shuji YONEDA ,  Masaru SENOO ,  Yuki YAKUSHIGAWA

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/08

Abstract: In a semiconductor device, a semiconductor substrate has an IGBT region and a FWD, and includes a first conductivity type drift layer, a second conductivity type base layer disposed on the drift layer, a second conductivity type collector layer disposed opposite to the base layer with respect to the drift layer in the IGBT region, and a first conductivity type cathode layer disposed opposite to the base layer with respect to the drift layer in the FWD region. The collector layer includes an extension portion that covers only a part of the cathode layer on a side adjacent to the drift layer. Alternatively, the collector layer includes an extension portion that entirely covers a region of the cathode layer adjacent to the drift layer, and has an area density of 3.5×1012 cm−2 or less.