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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140239489A1

    公开(公告)日：2014-08-28

    申请号：US14183754

    申请日：2014-02-19

    Applicant: DENSO CORPORATION

    Inventor： Shuji YONEDA

    IPC: H01L23/482

    CPC classification number: H01L23/4822 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49575 ,  H01L25/0655 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a semiconductor chip, multiple terminals arranged in a first direction, a resin portion sealing the semiconductor chip and the terminals. The terminals are projected from a side surface of the resin portion in a second direction, and include at least one subject terminal having a first portion and a second portion. In the subject terminal, a first longitudinal end of the first portion is positioned inside of the resin portion and a second longitudinal end of the first portion is positioned outside of the resin portion, and the second portion is arranged adjacent to the first portion. Further, a length of the first portion is greater than a length of the second portion in the third direction, and a length of the first portion is smaller than a length of the second portion in the first direction.

    Abstract translation: 半导体器件包括半导体芯片，沿第一方向布置的多个端子，密封半导体芯片和端子的树脂部分。 端子从树脂部分的侧表面沿第二方向突出，并且包括至少一个具有第一部分和第二部分的对象端子。 在被检体端子中，第一部分的第一纵向端部位于树脂部分的内部，第一部分的第二纵向端部位于树脂部分的外侧，第二部分邻近第一部分布置。 此外，第一部分的长度大于第二部分在第三方向上的长度，并且第一部分的长度小于第一部分在第一方向上的长度。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230037409A1

    公开(公告)日：2023-02-09

    申请号：US17972945

    申请日：2022-10-25

    Applicant: DENSO CORPORATION

    Inventor： Masanori MIYATA ,  Shuji YONEDA ,  Masaru SENOO ,  Yuki YAKUSHIGAWA

    IPC: H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/08

    Abstract: In a semiconductor device, a semiconductor substrate has an IGBT region and a FWD, and includes a first conductivity type drift layer, a second conductivity type base layer disposed on the drift layer, a second conductivity type collector layer disposed opposite to the base layer with respect to the drift layer in the IGBT region, and a first conductivity type cathode layer disposed opposite to the base layer with respect to the drift layer in the FWD region. The collector layer includes an extension portion that covers only a part of the cathode layer on a side adjacent to the drift layer. Alternatively, the collector layer includes an extension portion that entirely covers a region of the cathode layer adjacent to the drift layer, and has an area density of 3.5×1012 cm−2 or less.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190221658A1

    公开(公告)日：2019-07-18

    申请号：US16358756

    申请日：2019-03-20

    Applicant: DENSO CORPORATION

    Inventor： Shuji YONEDA

    IPC: H01L29/739 ,  H01L27/07 ,  H01L29/10 ,  H01L29/08

    CPC classification number: H01L29/7397 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06 ,  H01L27/0716 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/739 ,  H01L29/78

    Abstract: A semiconductor device includes: a semiconductor substrate providing a drift layer; a base layer; a plurality of trenches; an emitter region; an emitter electrode; a collector layer; a collector electrode; a main gate electrode for providing an inversion layer and a dummy gate electrode not providing the inversion layer; a common gate pad; a first element that is arranged between the dummy gate electrode and the gate pad, shuts down or restricts conduction when applying a first voltage, and permits the conduction when applying a second voltage; and a second element that is arranged between the emitter electrode and a connection point between the dummy gate electrode and the first element, permits the conduction when applying the first voltage, and shuts down or restricts the conduction when applying the second voltage.

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