公开(公告)号：US20210043474A1

公开(公告)日：2021-02-11

申请号：US16983098

申请日：2020-08-03

Applicant: DISCO CORPORATION

Inventor： Masatoshi WAKAHARA ,  Hideyuki SANDOH

IPC: H01L21/67 ,  H01L21/683 ,  H01L23/544 ,  H01J37/32

Abstract: A plasma etching apparatus for processing a workpiece of a frame unit including the workpiece formed with division start points or division grooves along a plurality of mutually intersecting streets, and a frame that has an opening and that supports the workpiece on inside of the opening through an expanding tape includes a plasma etching unit that has a chuck table for holding the workpiece on a holding surface through the expanding tape and that supplies a plasmatized gas to the workpiece held by the chuck table, and an expanding unit that expands the expanding tape to divide the workpiece along the division start points or to widen a width of the division grooves.

公开(公告)号：US20210057225A1

公开(公告)日：2021-02-25

申请号：US16999513

申请日：2020-08-21

Applicant: DISCO CORPORATION

Inventor： Hideyuki SANDOH ,  Ichiro YAMAHATA ,  Tomotaka TABUCHI

IPC: H01L21/304 ,  H01L21/3065

Abstract: There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.

公开(公告)号：US20230066651A1

公开(公告)日：2023-03-02

申请号：US17819018

申请日：2022-08-11

Applicant: DISCO CORPORATION

Inventor： Hideyuki SANDOH

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/304

Abstract: An outer circumferential region of a metal film and a portion of an outer circumferential region of a substrate on a reverse side thereof are removed, thereby exposing the outer circumferential region of the substrate and creating on a reverse side of an outer circumferential region of the wafer an exposed surface where a portion closer to a face side of a wafer is located outwardly of a portion remoter from the face side of the wafer. When a tape is affixed to a reverse side of the wafer, no gap or a reduced gap is formed between the tape and the outer circumferential region of the wafer. As a result, problems are restrained from occurring when the wafer is divided to manufacture chips therefrom.

公开(公告)号：US20190109173A1

公开(公告)日：2019-04-11

申请号：US16151903

申请日：2018-10-04

Applicant: DISCO CORPORATION

Inventor： Ryugo OBA ,  Yukinobu OHURA ,  Hideyuki SANDOH

IPC: H01L27/146 ,  H01L21/78 ,  H01L21/683 ,  H01L23/544 ,  H01L21/3065 ,  H01L21/308

Abstract: A method of processing a wafer having devices disposed in respective regions demarcated on a front face thereof by a grid of a plurality of projected dicing lines on the front face, the method includes a mask layer forming step of covering the front face of the wafer except for the regions where grooves are to be formed along the projected dicing lines with a resin material mixed with an ultraviolet ray absorber, and forming a mask layer on the front face of the wafer, a plasma etching step of performing plasma etching on the wafer from the mask layer side using a fluorine-based stable gas as an etching gas, and forming grooves in the wafer along the projected dicing lines, and a mask layer removing step of removing the mask layer after the plasma etching step is performed.

公开(公告)号：US20220028742A1

公开(公告)日：2022-01-27

申请号：US17380606

申请日：2021-07-20

Applicant: DISCO CORPORATION

Inventor： Karl Heinz PRIEWASSER ,  Hideyuki SANDOH

IPC: H01L21/78 ,  H01L21/3065 ,  H01L21/66

Abstract: A method of processing a wafer includes a wafer preparing step of preparing a measurement wafer and a product wafer, a measurement etching step of supplying a gas in a plasma state to first areas of the measurement wafer that correspond to streets thereon to form grooves in the measurement wafer, a measuring step of demarcating a plurality of concentric areas in an array from a center to an outer circumference of the measurement wafer, and measuring depths of the grooves in the respective concentric areas, a thickness adjusting step of adjusting a thickness of the product wafer such that the product wafer is progressively thinner in areas thereof that correspond to the areas of the measurement wafer where the grooves are shallower, and an etching step of supplying a gas in a plasma state to second areas of the product wafer that correspond to streets thereon.

公开(公告)号：US20210104408A1

公开(公告)日：2021-04-08

申请号：US17061966

申请日：2020-10-02

Applicant: DISCO CORPORATION

Inventor： Hideyuki SANDOH ,  Minoru SUZUKI

IPC: H01L21/3065 ,  B23K26/36 ,  B23K37/04 ,  B23K26/06

Abstract: A processing method of a wafer includes a resist film coating step of coating either one surface of a front surface and a back surface with a resist film containing an ultraviolet absorber, a laser beam irradiation step of irradiating the side of the one surface with a laser beam absorbed by the wafer and removing part of the wafer and the resist film along planned dividing lines, a plasma etching step of supplying a gas in a plasma state to the side of the one surface and removing an exposed region of the wafer exposed along the planned dividing lines through plasma etching, and a check step of irradiating plural positions on the side of the one surface of the wafer with ultraviolet rays and detecting light emission of the resist film to measure the thickness of the resist film and check a coating state of the resist film.

公开(公告)号：US20210078101A1

公开(公告)日：2021-03-18

申请号：US17017274

申请日：2020-09-10

Applicant: DISCO CORPORATION

Inventor： Hideyuki SANDOH

IPC: B23K26/03 ,  B23K26/40

Abstract: A processing apparatus includes a chuck table for sucking and holding a workpiece and a camera unit imaging the workpiece. The chuck table includes a light passing portion that passes light. The light passing portion includes a first region that overlaps with the workpiece and has a first mirror face that reflects light that advances from the first region into the light passing portion. The camera unit can image the workpiece by detecting light reflected by the first mirror face after having been reflected by the workpiece held by the chuck table and advanced into the light passing portion.