WAFER PROCESSING METHOD
    1.
    发明申请

    公开(公告)号:US20210057225A1

    公开(公告)日:2021-02-25

    申请号:US16999513

    申请日:2020-08-21

    Abstract: There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.

    CHUCK TABLE MANUFACTURING METHOD
    2.
    发明公开

    公开(公告)号:US20240058918A1

    公开(公告)日:2024-02-22

    申请号:US18363955

    申请日:2023-08-02

    CPC classification number: B24B7/228 B24B41/068

    Abstract: A chuck table manufacturing method capable of changing over the shape of a holding surface according to at least two workpieces different in area or shape includes a porous plate sticking step of sticking a frame body and a porous plate to each other while the porous plate is accommodated in a recess of the frame body with an upper surface of the porous plate being exposed, a groove forming step of forming, in the porous plate, a groove reaching a bottom surface of the recess, and a resin filling step of filling the groove with a liquid resin and curing the liquid resin.

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