公开(公告)号：US10546758B2

公开(公告)日：2020-01-28

申请号：US15971538

申请日：2018-05-04

Applicant: DISCO CORPORATION

Inventor： Daigo Shitabo ,  Seiji Harada ,  Hiroki Takeuchi

IPC: H01L21/322 ,  H01L23/26

Abstract: A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a diffusing step of heating the wafer after performing the coating step, thereby diffusing the metal salt on the back side of the wafer to form a gettering layer containing the metal salt on the back side of the wafer, in which the metal salt is diffused in the gettering layer.

公开(公告)号：US11623300B2

公开(公告)日：2023-04-11

申请号：US17003529

申请日：2020-08-26

Applicant: DISCO CORPORATION

Inventor： Hiroki Takeuchi ,  Masanobu Takenaka ,  Yukito Akutagawa

IPC: B23K26/0622 ,  B23K26/035 ,  B23K26/03 ,  B23K101/40

Abstract: There is provided a method of determining whether or not a result of a processing process of a laser processing apparatus is acceptable including a laser processing step of applying a laser beam to predetermined processing regions of a workpiece held on a chuck table, thereby performing a piercing process on the workpiece, an image capturing step of capturing images of all the processing regions while moving the image capturing unit and the workpiece relatively to each other, a detecting step of detecting regions where light is not transmitted through the workpiece among the processing regions in the image captured in the image capturing step, and a determining step of determining that the laser processing apparatus needs to be readjusted if the regions where light is not transmitted through the workpiece is equal to or more than the predetermined quantity.

公开(公告)号：US20180323081A1

公开(公告)日：2018-11-08

申请号：US15971538

申请日：2018-05-04

Applicant: DISCO CORPORATION

Inventor： Daigo Shitabo ,  Seiji Harada ,  Hiroki Takeuchi

IPC: H01L21/322 ,  H01L23/26

CPC classification number: H01L21/3221 ,  H01L21/6836 ,  H01L23/26 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a diffusing step of heating the wafer after performing the coating step, thereby diffusing the metal salt on the back side of the wafer to form a gettering layer containing the metal salt on the back side of the wafer, in which the metal salt is diffused in the gettering layer.

公开(公告)号：US10854774B2

公开(公告)日：2020-12-01

申请号：US16159137

申请日：2018-10-12

Applicant: DISCO CORPORATION

Inventor： Tasuku Koyanagi ,  Hiroki Takeuchi

IPC: H01L33/00 ,  H01S5/30 ,  H01S5/02

Abstract: A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.