公开(公告)号：US20080061034A1

公开(公告)日：2008-03-13

申请号：US11852012

申请日：2007-09-07

申请人： Dae-Sik JUNN ,  Jeong-Beom LEE ,  Sung-Ho CHA ,  Sung-Min NA ,  Myung-Gon SONG ,  Duck-Ho KIM ,  Kyoung-Jin LIM

发明人： Dae-Sik JUNN ,  Jeong-Beom LEE ,  Sung-Ho CHA ,  Sung-Min NA ,  Myung-Gon SONG ,  Duck-Ho KIM ,  Kyoung-Jin LIM

IPC分类号： H01L21/3065

CPC分类号： H01J37/3299 ,  H01J37/32091 ,  H01J37/32743 ,  H01J37/32752 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/681 ,  H01L21/68785

摘要： An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.

摘要翻译： 蚀刻装置包括腔室，腔室中的衬底支撑件，衬底支撑件上方的衬底筛选单元，其中衬底筛选单元的直径小于或等于衬底;气体注入装置，将气体注入到 所述基板的周边，向所述室提供RF（射频）功率的电源单元以及检测所述基板支撑件和所述基板检测单元之间的间隔的多个传感器。