公开(公告)号：US20080128088A1

公开(公告)日：2008-06-05

申请号：US11927182

申请日：2007-10-29

申请人： Dae-Sik JUNN ,  Duck-Ho KIM ,  Myung-Gon SONG ,  Jeong-Beom LEE ,  Kyoung-Jin LIM ,  Sung-Ho CHA

发明人： Dae-Sik JUNN ,  Duck-Ho KIM ,  Myung-Gon SONG ,  Jeong-Beom LEE ,  Kyoung-Jin LIM ,  Sung-Ho CHA

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J2237/334

摘要： An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.

摘要翻译： 蚀刻装置包括：腔室; 腔室中的衬底支撑件; 衬底，其设置在所述衬底上并且具有切口区域和平坦区域中的一个，所述衬底具有除所述凹口区域和所述平坦区域之外的圆形边缘，其中所述衬底的边缘具有凹陷形状 在切口区域中，在平坦区域中具有弦形; 衬底筛选单元，其具有与衬底基本相同的形状并且设置在衬底上，衬底筛选单元具有对应于切口区域和平坦区域中的一个的部分，其中衬底筛选单元具有第一直径 小于或等于所述基板的第二直径; 气体喷射装置，其将气体供应到所述基板的周边; 以及向室提供RF（射频）功率的电源单元。

公开(公告)号：US07465672B2

公开(公告)日：2008-12-16

申请号：US11556127

申请日：2006-11-02

申请人： Gi-Chung Kwon ,  Nae-Eung Lee ,  Chang-Ki Park ,  Chun-Hee Lee ,  Duck-Ho Kim

发明人： Gi-Chung Kwon ,  Nae-Eung Lee ,  Chang-Ki Park ,  Chun-Hee Lee ,  Duck-Ho Kim

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

摘要翻译： 本发明涉及一种形成蚀刻掩模的方法。 根据本发明，提供一种形成蚀刻掩模的方法，包括以下步骤：在衬底上沉积含有硅的硬掩模膜; 在硬掩模膜上沉积光致抗蚀剂; 图案化光刻胶; 并使用光致抗蚀剂图案作为掩模蚀刻硬掩膜，并使用包括CH x F y（x，y = 1,2,3）气体的蚀刻气体。 此时，在193nm以下的波长下使用的光刻胶图案上刻蚀硬掩模膜时，可以使用包括CH 2 F 2和H 2气体的混合气体来增加硬掩模膜对光致抗蚀剂图案的蚀刻选择性。

公开(公告)号：US20080061034A1

公开(公告)日：2008-03-13

申请号：US11852012

申请日：2007-09-07

申请人： Dae-Sik JUNN ,  Jeong-Beom LEE ,  Sung-Ho CHA ,  Sung-Min NA ,  Myung-Gon SONG ,  Duck-Ho KIM ,  Kyoung-Jin LIM

发明人： Dae-Sik JUNN ,  Jeong-Beom LEE ,  Sung-Ho CHA ,  Sung-Min NA ,  Myung-Gon SONG ,  Duck-Ho KIM ,  Kyoung-Jin LIM

IPC分类号： H01L21/3065

CPC分类号： H01J37/3299 ,  H01J37/32091 ,  H01J37/32743 ,  H01J37/32752 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/681 ,  H01L21/68785

摘要： An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.

摘要翻译： 蚀刻装置包括腔室，腔室中的衬底支撑件，衬底支撑件上方的衬底筛选单元，其中衬底筛选单元的直径小于或等于衬底;气体注入装置，将气体注入到 所述基板的周边，向所述室提供RF（射频）功率的电源单元以及检测所述基板支撑件和所述基板检测单元之间的间隔的多个传感器。

公开(公告)号：US10273714B2

公开(公告)日：2019-04-30

申请号：US15509735

申请日：2015-06-18

申请人： Duck Ho Kim

发明人： Duck Ho Kim

IPC分类号： E05B1/04 ,  E05B1/00 ,  E05B63/00

摘要： The present invention relates to a replacement door handle, and comprises: a connection member which has a groove with a certain depth formed therein so as to be coupled to a door lock; and a handle body which has a corresponding fitting portion formed therein so that the connection member can be fitted into and coupled to the fitting portion. Thereby, the present invention has the following effects: it is possible to replace or change a door handle, which is coupled to a door lock, with or to a variety of designs; it is possible to replace or change the door handle in a convenient and easy manner; and it is possible to use the door handle according to a user's preference or taste.

公开(公告)号：US20170260773A1

公开(公告)日：2017-09-14

申请号：US15509735

申请日：2015-06-18

申请人： Duck Ho KIM

发明人： Duck Ho KIM

IPC分类号： E05B1/04

CPC分类号： E05B1/04 ,  E05B1/0061 ,  E05B1/0069 ,  E05B63/0056 ,  Y10T16/458

摘要： The present invention relates to a replacement door handle, and comprises: a connection member which has a groove with a certain depth formed therein so as to be coupled to a door lock; and a handle body which has a corresponding fitting portion formed therein so that the connection member can be fitted into and coupled to the fitting portion. Thereby, the present invention has the following effects: it is possible to replace or change a door handle, which is coupled to a door lock, with or to a variety of designs; it is possible to replace or change the door handle in a convenient and easy manner; and it is possible to use the door handle according to a user's preference or taste.

公开(公告)号：US20070114205A1

公开(公告)日：2007-05-24

申请号：US11556127

申请日：2006-11-02

申请人： Gi-Chung KWON ,  Nae-Eung LEE ,  Chang-Ki PARK ,  Chun-Hee LEE ,  Duck-Ho KIM

发明人： Gi-Chung KWON ,  Nae-Eung LEE ,  Chang-Ki PARK ,  Chun-Hee LEE ,  Duck-Ho KIM

IPC分类号： C23F1/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01L21/31116 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

摘要翻译： 本发明涉及一种形成蚀刻掩模的方法。 根据本发明，提供一种形成蚀刻掩模的方法，包括以下步骤：在衬底上沉积含有硅的硬掩模膜; 在硬掩模膜上沉积光致抗蚀剂; 图案化光刻胶; 并使用光致抗蚀剂图案作为掩模蚀刻硬掩模膜，并使用包含CH 2 x N x（x，y = 1,2,3）气体的蚀刻气体 。 此时，可以使用包括CH 2 2 H 2 H 2和H 2 O 2的混合气体来增加硬掩模膜对光致抗蚀剂图案的蚀刻选择性， 在193nm以下的波长下使用的光致抗蚀剂图案上刻蚀硬掩模膜时，