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    PET EXERCISE APPARATUS AND PET EXERCISE SYSTEM
    1.
    发明申请
    PET EXERCISE APPARATUS AND PET EXERCISE SYSTEM 审中-公开

    公开(公告)号：US20200275636A1

    公开(公告)日：2020-09-03

    申请号：US16649459

    申请日：2018-09-21

    Applicant: Dae-Yong Kim

    Inventor： Dae-Yong KIM ,  Seung-Hee SON

    IPC: A01K15/02 ,  F21V33/00

    Abstract: A pet exercise apparatus includes: a base module; a running module which has an exercise space formed therein in an axial direction and an inner circumferential surface or outer circumferential surface rotatably coupled to the base module; and an LED module provided in the base module or the running module to irradiate LED light to the exercise space. The pet exercise system may further includes: a rotary module which has an exercise space part formed therein as a space in which the pet may exercise and a gaze inducing part provided on an inner circumferential surface and inducing a pet's gaze so that the pet continuously moves in the exercise space part and may exercise; a support module supporting the rotary module so that the rotary module is rotatable according to the motion of the pet; a control module controlling an operation of the gaze inducing part; and a terminal including a communication part transmitting an operation control signal CI of the gaze inducing part to be transmitted to the control module.

    CARDIOPULMONARY RESUSCITATION (CPR) SIMULATOR ENABLING REPEATED DEFIBRILLATION TRAINING
    2.
    发明申请
    CARDIOPULMONARY RESUSCITATION (CPR) SIMULATOR ENABLING REPEATED DEFIBRILLATION TRAINING 有权
    心脏复苏（CPR）模拟器启动重复的定位训练

    公开(公告)号：US20140099618A1

    公开(公告)日：2014-04-10

    申请号：US13967661

    申请日：2013-08-15

    Applicant: Seung-Jin YANG ,  Dae-Yong KIM ,  In-Bae CHANG

    Inventor： Seung-Jin YANG ,  Dae-Yong KIM ,  In-Bae CHANG

    IPC: G09B23/28

    CPC classification number: G09B23/288

    Abstract: There is provided a Cardiopulmonary Resuscitation (CPR) simulator enabling repeated defibrillation training to allow a user to practice CPR and use of a defibrillator, and the CPR simulator includes a dummy in a body shape similar to a human body shape; a first magnet installed on a upper right part of a chest of a body of the dummy; a second magnet installed on a bottom left side of the chest of the body of the dummy; a first training pad having a first metal sheet formed on one side thereof and a first electrode pad formed on the other side thereof; and a second training pad having a second metal sheet formed on one side thereof and a second electrode pad formed on the other side thereof.

    Abstract translation: 提供了一种心肺复苏（CPR）模拟器，其能够进行重复除颤训练，以允许用户练习CPR并使用除颤器，并且CPR模拟器包括具有类似于人体形状的身体形状的虚拟人物; 安装在虚拟人体的胸部的右上方的第一磁体; 安装在虚拟人体的胸部左下方的第二磁体; 第一训练垫，其具有在其一侧上形成的第一金属片和在其另一侧上形成的第一电极焊盘; 以及第二训练垫，其具有形成在其一侧上的第二金属片和在其另一侧上形成的第二电极垫。

    POWER PATH CONTROLLER OF A SYSTEM-ON-CHIP
    3.
    发明申请
    POWER PATH CONTROLLER OF A SYSTEM-ON-CHIP 有权
    系统芯片的电力通道控制器

    公开(公告)号：US20160111134A1

    公开(公告)日：2016-04-21

    申请号：US14813896

    申请日：2015-07-30

    Applicant: Se-Ki KIM ,  Dae-Yong KIM ,  Dong-Hun HEO

    Inventor： Se-Ki KIM ,  Dae-Yong KIM ,  Dong-Hun HEO

    IPC: G11C5/14

    CPC classification number: G11C5/147 ,  G11C5/143

    Abstract: A power path controller included in a system-on-chip (SoC) is provided. The power path controller is coupled to a first power source and a second power source. The power path controller includes a first switch located between the first power source and a memory core included in the SoC, a second switch located between the second power source and the memory core, a comparator configured to compare a first power supply voltage supplied from the first power source with a second power supply voltage supplied from the second power source, and a switch controller configured to selectively activate the first switch or the second switch according to a comparison result of the comparator.

    Abstract translation: 提供了包括在片上系统（SoC）中的电源路径控制器。 电源路径控制器耦合到第一电源和第二电源。 功率路径控制器包括位于第一电源和包括在SoC中的存储器核心之间的第一开关，位于第二电源和存储器芯之间的第二开关，比较器，被配置为比较从第二电源提供的第一电源电压 第一电源，具有从第二电源提供的第二电源电压;以及开关控制器，被配置为根据比较器的比较结果选择性地启动第一开关或第二开关。

    VOLTAGE REGULATOR, MEMORY CONTROLLER AND VOLTAGE SUPPLYING METHOD THEREOF
    5.
    发明申请
    VOLTAGE REGULATOR, MEMORY CONTROLLER AND VOLTAGE SUPPLYING METHOD THEREOF 有权
    电压调节器，存储器控制器及其电压供应方法

    公开(公告)号：US20150162055A1

    公开(公告)日：2015-06-11

    申请号：US14504911

    申请日：2014-10-02

    Applicant: Sungmin YOO ,  Dae-Yong KIM ,  JuHwa KIM

    Inventor： Sungmin YOO ,  Dae-Yong KIM ,  JuHwa KIM

    IPC: G11C5/14 ,  H02M3/158

    CPC classification number: G11C5/147 ,  G11C5/148 ,  H02M3/158

    Abstract: A memory controller of inventive concepts may include an active regulator configured to operate in an active mode and be inactive in a sleep mode, an active logic configured to receive a drive voltage, a power gating switch configured to connect the active regulator to the active logic after a transient state of the active mode, the transient state being an initial time period of the active mode, and a charging circuit configured to charge the active logic during the transient state.

    Abstract translation: 发明概念的存储器控​​制器可以包括被配置为以活动模式操作并且在睡眠模式中不活动的有源调节器，被配置为接收驱动电压的有源逻辑，配置成将有源调节器连接到有源逻辑的电源门控开关 在激活模式的瞬态之后，所述瞬态状态是所述激活模式的初始时间段，以及充电电路，被配置为在所述瞬态状态期间对所述有源逻辑进行充电。

    SEMICONDUCTOR DEVICE MULTILAYER STRUCTURE, FABRICATION METHOD FOR THE SAME, SEMICONDUCTOR DEVICE HAVING THE SAME, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
    7.
    发明申请
    SEMICONDUCTOR DEVICE MULTILAYER STRUCTURE, FABRICATION METHOD FOR THE SAME, SEMICONDUCTOR DEVICE HAVING THE SAME, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权
    半导体器件多层结构，其制造方法，具有该半导体器件的半导体器件和半导体器件制造方法

    公开(公告)号：US20060223252A1

    公开(公告)日：2006-10-05

    申请号：US11379350

    申请日：2006-04-19

    Applicant: Jae-Hwa PARK ,  Jang-Hee LEE ,  Dae-Yong KIM ,  Hee-Sook PARK

    Inventor： Jae-Hwa PARK ,  Jang-Hee LEE ,  Dae-Yong KIM ,  Hee-Sook PARK

    IPC: H01L21/8234

    CPC classification number: H01L21/823842 ,  H01L21/823828 ,  H01L21/823835

    Abstract: In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. After forming the diffusion barrier layer, a heat treatment process may be additionally performed thereon. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.

    Abstract translation: 在一个实施例中，半导体器件包括形成在半导体衬底上的半导体衬底和掺杂导电层。 在掺杂导电层上方形成扩散阻挡层。 扩散阻挡层包括非晶半导体材料。 在形成扩散阻挡层之后，还可以在其上进行热处理工艺。 在扩散阻挡层上形成欧姆接触层。 金属阻挡层形成在欧姆接触层上。 在金属阻挡层上形成金属层。

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