公开(公告)号：US09824759B2

公开(公告)日：2017-11-21

申请号：US14609072

申请日：2015-01-29

申请人： Dae-woong Kwon ,  Jai-hyuk Song ,  Chang-sub Lee

发明人： Dae-woong Kwon ,  Jai-hyuk Song ,  Chang-sub Lee

IPC分类号： G11C16/10 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483

摘要： In a method of programming a non-volatile memory device, a first voltage is applied to a selected memory cell for programming, and a second voltage is applied to a non-selected memory cell. Before the second voltage rises to a predetermined voltage level, which is less than a program voltage level, the first voltage is greater than the second voltage or the second voltage is maintained at greater than a ground voltage level. Related non-volatile memory devices and memory systems are also discussed.

公开(公告)号：US20150228345A1

公开(公告)日：2015-08-13

申请号：US14609072

申请日：2015-01-29

申请人： Dae-woong Kwon ,  Jal-hyuk Song ,  Chang-sub Lee

发明人： Dae-woong Kwon ,  Jal-hyuk Song ,  Chang-sub Lee

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483

摘要： In a method of programming a non-volatile memory device, a first voltage is applied to a selected memory cell for programming, and a second voltage is applied to a non-selected memory cell. Before the second voltage rises to a predetermined voltage level, which is less than a program voltage level, the first voltage is greater than the second voltage or the second voltage is maintained at greater than a ground voltage level. Related non-volatile memory devices and memory systems are also discussed.

摘要翻译： 在编程非易失性存储器件的方法中，将第一电压施加到所选择的存储器单元用于编程，并且将第二电压施加到未选择的存储器单元。 在第二电压上升到小于编程电压电平的预定电压电平之前，第一电压大于第二电压或第二电压保持在大于接地电压电平。 还讨论了相关的非易失性存储器件和存储器系统。

公开(公告)号：US09105235B2

公开(公告)日：2015-08-11

申请号：US13219959

申请日：2011-08-29

申请人： Dae-woong Kwon ,  Byung-gook Park ,  Chang-jung Kim ,  Jae-chul Park

发明人： Dae-woong Kwon ,  Byung-gook Park ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： G09G3/30 ,  G09G3/32

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251

摘要： A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor.

摘要翻译： 一种驱动有源显示装置的方法。 该方法包括恢复连接到像素的开关晶体管的阈值电压。 该恢复包括在充电期间对每个像素充电之前向开关晶体管施加负偏置电压。 负偏压施加到开关晶体管的漏极。

公开(公告)号：US20120113078A1

公开(公告)日：2012-05-10

申请号：US13219959

申请日：2011-08-29

申请人： Dae-woong Kwon ,  Byung-gook Park ,  Chang-jung Kim ,  Jae-chul Park

发明人： Dae-woong Kwon ,  Byung-gook Park ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251

摘要： A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor.

摘要翻译： 一种驱动有源显示装置的方法。 该方法包括恢复连接到像素的开关晶体管的阈值电压。 该恢复包括在充电期间对每个像素充电之前向开关晶体管施加负偏置电压。 负偏压施加到开关晶体管的漏极。

公开(公告)号：US09123817B2

公开(公告)日：2015-09-01

申请号：US13096314

申请日：2011-04-28

申请人： Dae-woong Kwon ,  Jae-chul Park ,  Byung-gook Park ,  Sang-wan Kim ,  Jang-hyun Kim ,  Ji-soo Chang

发明人： Dae-woong Kwon ,  Jae-chul Park ,  Byung-gook Park ,  Sang-wan Kim ,  Jang-hyun Kim ,  Ji-soo Chang

IPC分类号： H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908

摘要： Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.

摘要翻译： 示例实施例公开了包括晶体管的晶体管和电子器件。 晶体管可以包括栅绝缘层和栅极之间的电荷阻挡层。 栅极绝缘层和栅极之间的能量势垒可以通过电荷阻挡层增加。 晶体管可以是包括由氧化物半导体形成的沟道层的氧化物晶体管。

公开(公告)号：US20120085998A1

公开(公告)日：2012-04-12

申请号：US13096314

申请日：2011-04-28

申请人： Dae-woong Kwon ,  Jae-chul Park ,  Byung-gook Park ,  Sang-wan Kim ,  Jang-hyun Kim ,  Ji-soo Chang

发明人： Dae-woong Kwon ,  Jae-chul Park ,  Byung-gook Park ,  Sang-wan Kim ,  Jang-hyun Kim ,  Ji-soo Chang

IPC分类号： H01L29/772

CPC分类号： H01L29/7869 ,  H01L29/4908

摘要： Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.

摘要翻译： 示例性实施例公开了包括晶体管的晶体管和电子器件。 晶体管可以包括栅极绝缘层和栅极之间的电荷阻挡层。 栅极绝缘层和栅极之间的能量势垒可以通过电荷阻挡层增加。 晶体管可以是包括由氧化物半导体形成的沟道层的氧化物晶体管。