公开(公告)号：US20230197848A1

公开(公告)日：2023-06-22

申请号：US18112063

申请日：2023-02-21

申请人： Daedalus Prime LLC

发明人： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

CPC分类号： H01L29/7848 ,  H01L29/66568 ,  H01L29/1054 ,  H01L29/0673 ,  H01L29/32 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/1033 ,  H01L29/165

摘要： Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US20230006063A1

公开(公告)日：2023-01-05

申请号：US17941814

申请日：2022-09-09

申请人： Daedalus Prime LLC

发明人： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

摘要： Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US11610995B2

公开(公告)日：2023-03-21

申请号：US17941814

申请日：2022-09-09

申请人： Daedalus Prime LLC

发明人： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/165

摘要： Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US11482618B2

公开(公告)日：2022-10-25

申请号：US17723582

申请日：2022-04-19

申请人： Daedalus Prime LLC

发明人： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/165

摘要： Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.