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公开(公告)号：US20250043399A1
公开(公告)日：2025-02-06
申请号：US18918239
申请日：2024-10-17
Applicant: DAI NIPPON PRINTING CO., LTD.
Inventor： Hiroki OKA , Sachiyo MATSUURA , Chiaki HATSUTA , Chikao IKENAGA , Hideyuki OKAMOTO , Masato USHIKUSA
IPC: C22C38/10 , B21B1/22 , C21D6/00 , C21D8/02 , C21D9/46 , C22C38/08 , C23C2/26 , C23C14/04 , C23C14/24 , C25D1/04 , C25D3/56 , G03F7/00 , G03F7/20 , H10K50/11 , H10K59/00 , H10K71/00 , H10K71/16 , H10K77/10
Abstract: A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 μm. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 μm2 to 50 μm2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.
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2.发明公开公开(公告)号：US20230272518A1
公开(公告)日：2023-08-31
申请号：US18168050
申请日：2023-02-13
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Hideyuki OKAMOTO , Hiroshi KOI
CPC classification number: C23C14/042 , C23C14/243
Abstract: A deposition mask apparatus includes a frame, a deposition mask, and an alignment mask. The alignment mask has two first alignment mask holes located at positions different from each other in the second direction and overlapping the frame. A first weld joining the frame with the alignment mask is located in an outer side of the alignment mask in the second direction with respect to a corresponding one of the first alignment mask holes. A second weld joining the frame with the alignment mask is located in an inner side of the alignment mask in the second direction with respect to a corresponding one of the first alignment mask holes.
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公开(公告)号：US20210348265A1
公开(公告)日：2021-11-11
申请号：US17194708
申请日：2021-03-08
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Hideyuki OKAMOTO , Chikao IKENAGA , Yoshihiro BABA , Daigo AOKI
Abstract: A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.
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公开(公告)号：US20210157232A1
公开(公告)日：2021-05-27
申请号：US17168496
申请日：2021-02-05
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Chikao IKENAGA , Chiaki HATSUTA , Hiroki OKA , Sachiyo MATSUURA , Hideyuki OKAMOTO , Masato USHIKUSA
Abstract: A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 μm. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 μm2 to 50 μm2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.
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5.发明公开公开(公告)号：US20230250527A1
公开(公告)日：2023-08-10
申请号：US18159310
申请日：2023-01-25
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Yusuke SHIMIZU , Hideyuki OKAMOTO
CPC classification number: C23C14/042 , C23C14/24
Abstract: A method for inspecting a mask may include a first calculation step of calculating the y components y0 to yn of the coordinates of reference points in a y direction, an adjustment step of adjusting a tension so that a simple amplitude converted value ΔC calculated based on the y components y0 to yn becomes less than or equal to a first threshold, the tension being applied to the mask, and a second evaluation step of evaluating linearity of the mask with reference to amplitude ΔS calculated based on the y components of the coordinates of the reference points of the mask under the tension adjusted in the adjustment step.
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Patent Agency Ranking
公开(公告)号：US20200335699A1
公开(公告)日：2020-10-22
申请号：US16923751
申请日：2020-07-08
Applicant: DAI NIPPON PRINTING CO., LTD.
Inventor： Katsunari OBATA , Toshihiko TAKEDA , Yoshiyuki HONMA , Hideyuki OKAMOTO
Abstract: A method for producing a frame-equipped vapor deposition mask sequentially includes preparing a vapor deposition mask including a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit, the metal mask and the resin mask being stacked, retaining a part of the vapor deposition mask by a retainer and stretching the vapor deposition mask retained by the retainer outward, and fixing the vapor deposition mask in a state of being stretched to a frame having a through hole. During stretching, any one or both adjustments of a rotating adjustment and a moving adjustment of the vapor deposition mask are performed with respect to the vapor deposition mask in the state of being stretched or with the vapor deposition mask being stretched.
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公开(公告)号：US20200291509A1
公开(公告)日：2020-09-17
申请号：US16855016
申请日：2020-04-22
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Isao MIYATANI , Daigo AOKI , Masato USHIKUSA , Yoshinori MURATA , Hideyuki OKAMOTO
Abstract: A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.
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8.发明申请METHOD FOR PRODUCING FRAME-EQUIPPED VAPOR DEPOSITION MASK, STRETCHING APPARATUS, APPARATUS FOR PRODUCING ORGANIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR DEVICE 审中-公开用于生产框架式蒸气沉积掩模的方法，拉伸装置，用于生产有机半导体器件的装置和用于生产有机半导体器件的方法公开(公告)号：US20160301006A1
公开(公告)日：2016-10-13
申请号：US15188111
申请日：2016-06-21
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Katsunari OBATA , Toshihiko TAKEDA , Yoshiyuki HONMA , Hideyuki OKAMOTO
CPC classification number: H01L51/0011 , C23C14/042 , C23C14/24 , H01L27/3211 , H01L51/0021 , H01L51/5012 , H01L51/5221 , H01L51/56
Abstract: A method for producing a frame-equipped vapor deposition mask sequentially includes preparing a vapor deposition mask including a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit, the metal mask and the resin mask being stacked, retaining a part of the vapor deposition mask by a retainer and stretching the vapor deposition mask retained by the retainer outward, and fixing the vapor deposition mask in a state of being stretched to a frame having a through hole. During stretching, any one or both adjustments of a rotating adjustment and a moving adjustment of the vapor deposition mask are performed with respect to the vapor deposition mask in the state of being stretched or with the vapor deposition mask being stretched.
Abstract translation: 依次制备具有框架的蒸镀掩模的方法包括制备包括具有狭缝的金属掩模的气相沉积掩模和具有对应于在与狭缝重叠的位置处通过气相沉积产生的图案的开口的树脂掩模， 金属掩模和树脂掩模层叠，通过保持器保持一部分蒸镀掩模，并将由保持器保持的蒸镀掩模向外延伸，并将该蒸镀掩模固定在具有通孔的框架的状态 孔。 在拉伸期间，在被拉伸的状态下或者气相沉积掩模被拉伸的状态下，相对于气相沉积掩模执行旋转调节和气相沉积掩模的移动调节的任何一个或两个调整。
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公开(公告)号：US20240060168A1
公开(公告)日：2024-02-22
申请号：US18339350
申请日：2023-06-22
Applicant: DAI NIPPON PRINTING CO., LTD.
Inventor： Hideyuki OKAMOTO , Chikao IKENAGA
CPC classification number: C23C14/042 , C23C14/24 , G03F9/7096 , G03F1/50
Abstract: A mask may include a first portion including at least one first through-hole group, and a second portion including at least one second through-hole group located next to the first through-hole group in a first direction. A method of manufacturing the mask may include: a step of preparing a laminated body that includes an original base material and a resist layer; a first exposure process of exposing the resist layer corresponding to the first portion by using a first exposure mask; a second exposure process of exposing the resist layer corresponding to the second portion by using a second exposure mask; a process of developing the resist layer corresponding to the first portion and the resist layer corresponding to the second portion; and a process of etching the original base material through the resist layer corresponding to the first portion and the resist layer corresponding to the second portion.
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公开(公告)号：US20220403498A1
公开(公告)日：2022-12-22
申请号：US17806537
申请日：2022-06-13
Applicant: Dai Nippon Printing Co., Ltd.
Inventor： Hideyuki OKAMOTO
Abstract: A mask apparatus may include a frame including first and second sides opposing each other in a first direction across an opening and third and fourth sides opposing each other in a second direction crossing the first direction across the opening. A manufacturing apparatus may include a pressing mechanism that presses the first and second sides toward the opening, a displacement measuring mechanism that measures amounts of deformation of the first and second sides in the first direction, and a fixing unit that fixes a mask to the first and second sides. The pressing mechanism may include five or more pressing units that are arranged at intervals of 500 mm or less in the second direction and that press the first side and five or more pressing units that are arranged at intervals of 500 mm or less in the second direction and that press the second side.
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