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公开(公告)号:US08463086B2
公开(公告)日:2013-06-11
申请号:US12749629
申请日:2010-03-30
申请人: Daisei Shoji , Takuya Fujii
发明人: Daisei Shoji , Takuya Fujii
CPC分类号: H01S5/0265 , H01S5/026 , H01S5/0655 , H01S5/1014 , H01S5/12 , H01S5/227 , H01S2301/176
摘要: An optical semiconductor device in which light having a wavelength of 1.25 μm or greater is waveguided, includes: a first waveguide of embedded type that includes a semiconductor and is lattice-matched with InP, the first waveguide having a region having a first constant width equal to or greater than 1.50 μm and a first region narrower than the region; and a second waveguide of embedded type that includes another semiconductor having a refractive index different from that of the first waveguide, the second waveguide having a region having a second constant width smaller than 1.50 μm and a second region wider than said region. The first waveguide and the second waveguide are joined at an intermediate waveguide portion. The intermediate waveguide portion includes the first region and the second region and a joining plane on which the first region and the second region are joined. The joining plane has a width equal to or smaller than 1.35 μm.
摘要翻译: 其波长为1.25μm以上的光的光半导体装置包括:包含半导体并与InP晶格匹配的嵌入式第一波导,所述第一波导具有第一恒定宽度等于 至少大于1.50μm,第一区域比该区域窄; 以及第二波导,其包括具有与所述第一波导的折射率不同的折射率的另一半导体,所述第二波导具有第二恒定宽度小于1.50μm的区域和比所述区域宽的第二区域。 第一波导和第二波导在中间波导部分处接合。 所述中间波导部分包括所述第一区域和所述第二区域以及所述第一区域和所述第二区域在其上接合的接合平面。 接合面具有等于或小于1.35μm的宽度。