公开(公告)号：US08463086B2

公开(公告)日：2013-06-11

申请号：US12749629

申请日：2010-03-30

申请人： Daisei Shoji ,  Takuya Fujii

发明人： Daisei Shoji ,  Takuya Fujii

IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/10 ,  H01S3/10

CPC分类号： H01S5/0265 ,  H01S5/026 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/227 ,  H01S2301/176

摘要： An optical semiconductor device in which light having a wavelength of 1.25 μm or greater is waveguided, includes: a first waveguide of embedded type that includes a semiconductor and is lattice-matched with InP, the first waveguide having a region having a first constant width equal to or greater than 1.50 μm and a first region narrower than the region; and a second waveguide of embedded type that includes another semiconductor having a refractive index different from that of the first waveguide, the second waveguide having a region having a second constant width smaller than 1.50 μm and a second region wider than said region. The first waveguide and the second waveguide are joined at an intermediate waveguide portion. The intermediate waveguide portion includes the first region and the second region and a joining plane on which the first region and the second region are joined. The joining plane has a width equal to or smaller than 1.35 μm.

摘要翻译： 其波长为1.25μm以上的光的光半导体装置包括：包含半导体并与InP晶格匹配的嵌入式第一波导，所述第一波导具有第一恒定宽度等于 至少大于1.50μm，第一区域比该区域窄; 以及第二波导，其包括具有与所述第一波导的折射率不同的折射率的另一半导体，所述第二波导具有第二恒定宽度小于1.50μm的区域和比所述区域宽的第二区域。 第一波导和第二波导在中间波导部分处接合。 所述中间波导部分包括所述第一区域和所述第二区域以及所述第一区域和所述第二区域在其上接合的接合平面。 接合面具有等于或小于1.35μm的宽度。

公开(公告)号：US20110192684A1

公开(公告)日：2011-08-11

申请号：US13125119

申请日：2009-09-18

申请人： Hiroshi Kashiwakura ,  Keishiro Hirohata ,  Takuya Fujii

发明人： Hiroshi Kashiwakura ,  Keishiro Hirohata ,  Takuya Fujii

IPC分类号： B66B13/26

CPC分类号： B66B13/26

摘要： There is provided an elevator safety device that can prevent a light beam from being looked into. The elevator safety device according to the present invention includes light emitting means for emitting a light beam crossing an entrance; light receiving means for detecting the light beam emitted from the light emitting means; foreign matter detection means for generating a foreign matter detection signal when detection of the light beam by the light receiving means is interrupted; and control means. The control means causes the light emitting means to stop an emission in a fully opened state of car doors, and causes the light emitting means to start the emission at a start of or during a closing operation of the car doors.

摘要翻译： 提供了一种电梯安全装置，其可以防止光束被观察。 根据本发明的电梯安全装置包括用于发射穿过入口的光束的发光装置; 光接收装置，用于检测从发光装置发射的光束; 当由光接收装置检测到光束时产生异物检测信号的异物检测装置被中断; 和控制装置。 控制装置使得发光装置停止轿厢门的完全打开状态的发射，并且使得发光装置在轿厢门的关闭操作开始时或者在关闭操作期间开始发射。

公开(公告)号：US20110155511A1

公开(公告)日：2011-06-30

申请号：US13061679

申请日：2009-08-24

申请人： Xiao Sun ,  Weifeng Chen ,  Kunpeng Yang ,  Hiroshi Kashiwakura ,  Takuya Fujii ,  Keishiro Hirohata

发明人： Xiao Sun ,  Weifeng Chen ,  Kunpeng Yang ,  Hiroshi Kashiwakura ,  Takuya Fujii ,  Keishiro Hirohata

IPC分类号： B66B13/26

CPC分类号： B66B13/26

摘要： In a safety device for an elevator, on one car door among a pair of car doors, a light-emitting/light-receiving unit is disposed facing downward at an upper end position of a vertical line separated by a predetermined distance from an end face in a closing direction, which is to abut the other car door, toward the side of the other car door, and a first reflecting member is disposed facing upward at a lower end position of the vertical line. A housing space that houses the light-emitting/light-receiving unit in a state where both car doors are closed is formed on the other car door, and a second reflecting member is disposed facing upward at a bottom portion of the housing space and extends from the same position as an end face in a closing direction of the other car door toward the back of the housing space.

摘要翻译： 在电梯的安全装置中，在一对车门之间的一个车门上，发光/受光单元在与端面隔开预定距离的垂直线的上端位置处向下设置 在靠近另一个轿厢门的关闭方向上，朝向另一个轿厢门的侧面，并且在垂直线的下端位置处面向上设置第一反射部件。 在另一个轿厢门上形成有在两个轿厢门关闭的状态下容纳发光/光接收单元的住房空间，并且第二反射构件在壳体空间的底部向上设置并且延伸 从与另一个轿厢门的关闭方向的端面相同的位置朝向容纳空间的后部。

公开(公告)号：US20100246629A1

公开(公告)日：2010-09-30

申请号：US12730786

申请日：2010-03-24

申请人： Takuya Fujii ,  Shoichi Ogita

发明人： Takuya Fujii ,  Shoichi Ogita

IPC分类号： H01S5/026

CPC分类号： H01S5/4068 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/50

摘要： A multiple-wavelength laser device includes a first semiconductor laser chip having two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; a second semiconductor laser chip having two or less than two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; an optical coupler that combines the output optical axes of the first and the second semiconductor laser chips; and a plurality of drive current pathways or a plurality of signal transmission pathways that are coupled to each of the unit laser portions of the first and the second semiconductor laser chips with a connection conductor.

摘要翻译： 多波长激光器件包括具有两个可调单位激光器部分的第一半导体激光器芯片，该单元激光器部分的光学耦合到单个输出光轴; 具有两个或更少于两个可调单位激光器部分的第二半导体激光器芯片，所述单元激光部分的输出光耦合到单个输出光轴; 组合第一和第二半导体激光器芯片的输出光轴的光耦合器; 以及多个驱动电流路径或多个信号传输路径，其通过连接导体耦合到第一和第二半导体激光器芯片的每个单位激光器部分。

公开(公告)号：US07362782B2

公开(公告)日：2008-04-22

申请号：US11727953

申请日：2007-03-29

申请人： Tsutomu Ishikawa ,  Takuya Fujii

发明人： Tsutomu Ishikawa ,  Takuya Fujii

IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00

CPC分类号： H01S5/02276 ,  G02F1/0147 ,  H01L2224/48091 ,  H01S5/024 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/1209 ,  H01S5/125 ,  H01L2924/00014

摘要： An optical semiconductor device includes a wavelength-tunable semiconductor laser chip, a mount carrier, a first temperature sensor and a wire. The wavelength-tunable semiconductor laser chip has a first optical waveguide and a second optical waveguide. The second optical waveguide has a heater on a surface thereof and is optically coupled to the first optical waveguide. The mount carrier is for mounting the wavelength-tunable semiconductor laser chip, and has a first area arranged at a surface of the mount carrier of the first optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted. The first temperature sensor is mounted on the first area. The wire couples between the heater and a second area arranged at a surface of the mount carrier of the second optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted.

摘要翻译： 光学半导体器件包括波长可调谐半导体激光器芯片，安装载体，第一温度传感器和导线。 波长可调半导体激光器芯片具有第一光波导和第二光波导。 第二光波导在其表面上具有加热器，并且光耦合到第一光波导。 安装载体用于安装波长可调半导体激光器芯片，并且当安装波长可调谐半导体激光器芯片时，具有布置在第一光波导侧的安装载体的表面处的第一区域。 第一温度传感器安装在第一区域上。 当安装波长可调谐半导体激光器芯片时，线耦合在加热器和布置在第二光波导侧的安装载体的表面处的第二区域之间。

公开(公告)号：US20070228551A1

公开(公告)日：2007-10-04

申请号：US11730260

申请日：2007-03-30

申请人： Tsutomu Ishikawa ,  Takuya Fujii

发明人： Tsutomu Ishikawa ,  Takuya Fujii

IPC分类号： H01L33/00 ,  H01L23/053 ,  H01L23/14 ,  H01L31/12 ,  H01L23/12

CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

摘要翻译： 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

公开(公告)号：US06955994B2

公开(公告)日：2005-10-18

申请号：US10024391

申请日：2001-12-21

申请人： Takayuki Watanabe ,  Hiroaki Ito ,  Takuya Fujii

发明人： Takayuki Watanabe ,  Hiroaki Ito ,  Takuya Fujii

IPC分类号： G02B6/13 ,  H01L21/308 ,  H01S5/10 ,  H01S5/20 ,  H01S5/227 ,  H01S5/343 ,  H01L21/302

CPC分类号： B82Y20/00 ,  H01S5/1003 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/227 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/34373

摘要： A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在起始生长表面上划分InP层，导致InP层具有凸起结构，和（b）通过包括盐酸的附魔湿法蚀刻InP层 酸和乙酸，从而使InP层的表面变平。

公开(公告)号：US20110292960A1

公开(公告)日：2011-12-01

申请号：US13117541

申请日：2011-05-27

申请人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

发明人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

IPC分类号： H01S5/026

CPC分类号： H01S5/0287 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0283 ,  H01S5/0602 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/1212

摘要： A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion.

摘要翻译： 一种波长可调谐半导体激光器包括：反射率为10％以上的第一面; 第二个方面 第一面和第二面之间的波长选择部分; 以及第一面和波长选择部之间的光吸收区域。 另一种波长可调谐半导体激光器包括：对半导体激光器内部的反射率为10％以上的第一面; 产出的第二个方面; 具有衍射光栅并位于第一和第二面之间的波长选择部分; 位于第一面和波长选择部之间的光吸收区。

公开(公告)号：US07894693B2

公开(公告)日：2011-02-22

申请号：US12062830

申请日：2008-04-04

申请人： Takuya Fujii

发明人： Takuya Fujii

IPC分类号： G02B6/34

CPC分类号： H01S5/0612 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1039 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125

摘要： An optical semiconductor device includes a waveguide having one or more first segments having a region that includes a diffractive grating and another region combined to the region, one or more second segments having a region that includes a diffractive grating and another region combined to the region and a plurality of third segments having a region the includes a diffractive grating and another region combined to the region, a length of the second segment being different from that of the first segment, a length of the third segment being shown as L3=L1+(L2−L1)×K1 in which 0.3≦K1≦0.7, L1 is a length of the first segment, L2 is a length of the second segment and L3 is a length of the third segment; and a refractive index control portion controlling refractive index of the first segment through the third segments.

公开(公告)号：US20090103585A1

公开(公告)日：2009-04-23

申请号：US12314350

申请日：2008-12-09

申请人： Tsutomu Ishikawa ,  Takuya Fujii

发明人： Tsutomu Ishikawa ,  Takuya Fujii

IPC分类号： H01S5/00

CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.