MEMORY CELLS INCLUDING TOP ELECTRODES COMPRISING METAL SILICIDE, APPARATUSES INCLUDING SUCH CELLS, AND RELATED METHODS
    1.
    发明申请
    MEMORY CELLS INCLUDING TOP ELECTRODES COMPRISING METAL SILICIDE, APPARATUSES INCLUDING SUCH CELLS, AND RELATED METHODS 有权
    包含包含金属硅酸盐的顶部电极,包括这种细胞的装置的记忆细胞及相关方法

    公开(公告)号:US20130175494A1

    公开(公告)日:2013-07-11

    申请号:US13347840

    申请日:2012-01-11

    IPC分类号: H01L47/00 H01L21/02

    摘要: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.

    摘要翻译: 存储单元(例如,CBRAM单元)包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。 离子源材料可以包括硫族化物材料和金属中的至少一种。 装置,例如系统和装置,包括多个这样的存储单元。 存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。 形成存储单元的方法包括形成第一电极,形成活性材料,形成离子源材料,以及在金属离子源材料上形成包括金属硅化物的第二电极。 包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。

    Memory cells including top electrodes comprising metal silicide, apparatuses including such cells, and related methods
    2.
    发明授权
    Memory cells including top electrodes comprising metal silicide, apparatuses including such cells, and related methods 有权
    包括包括金属硅化物的顶部电极,包括这种电池的装置的存储单元和相关方法

    公开(公告)号:US09048415B2

    公开(公告)日:2015-06-02

    申请号:US13347840

    申请日:2012-01-11

    IPC分类号: H01L47/00 H01L45/00

    摘要: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.

    摘要翻译: 存储单元(例如,CBRAM单元)包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。 离子源材料可以包括硫族化物材料和金属中的至少一种。 装置,例如系统和装置,包括多个这样的存储单元。 存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。 形成存储单元的方法包括形成第一电极,形成活性材料,形成离子源材料,以及在金属离子源材料上形成包括金属硅化物的第二电极。 包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。

    Mask defect testing apparatus
    3.
    发明授权
    Mask defect testing apparatus 失效
    面膜缺陷检测仪

    公开(公告)号:US08505389B2

    公开(公告)日:2013-08-13

    申请号:US12762555

    申请日:2010-04-19

    申请人: Si-Young Park

    发明人: Si-Young Park

    IPC分类号: G01N3/08

    CPC分类号: G03F1/20 G03F1/84

    摘要: A mask defect test apparatus, including a tension jig unit having a supporter on which a metal mask to be tested is located, a clamp part disposed at both sides of the supporter to fix opposite edges of the metal mask, and a tension part to apply a tension force to the metal mask fixed by the clamp part; and a test unit to test the metal mask fixed by the tension jig unit. A vertical distance between the metal mask located on the supporter and the test unit is less than or equal to a vertical distance between the tension jig unit and the test unit.

    摘要翻译: 一种掩模缺陷测试装置,包括具有支撑体的张力夹具单元,所述支架上设有待测试的金属掩模,夹持部分设置在所述支撑件的两侧以固定所述金属掩模的相对边缘;以及张力部件, 由夹紧部固定的金属掩模的张力; 以及用于测试由张力夹具单元固定的金属掩模的测试单元。 位于支架上的金属掩模与测试单元之间的垂直距离小于或等于张力夹具单元与测试单元之间的垂直距离。

    Method and apparatus for fabricating vertical deposition mask
    4.
    发明授权
    Method and apparatus for fabricating vertical deposition mask 有权
    用于制造垂直沉积掩模的方法和装置

    公开(公告)号:US08459526B2

    公开(公告)日:2013-06-11

    申请号:US12267442

    申请日:2008-11-07

    IPC分类号: B23K37/04 B23K26/00

    CPC分类号: G03F7/12 C23C14/042

    摘要: A method and apparatus for fabricating a vertical deposition mask capable of welding a mask sheet and a mask frame for preventing a large area mask from drooping due to the weight of the mask. The apparatus includes a tensioning device for tensioning a mask sheet and a welder for attaching a mask frame to a circumference of the mask sheet. The tensioning device includes clamps for supporting the mask sheet and tensioners coupled to the clamps for applying tensile force to the clamps and to evenly fix in place the mask sheet by the clamps.

    摘要翻译: 一种用于制造能够焊接掩模片和掩模框的垂直沉积掩模的方法和装置,用于防止由于掩模的重量而使大面积掩模下垂。 该装置包括用于张紧掩模片的张紧装置和用于将掩模框架附接到掩模片的周边的焊工。 张紧装置包括用于支撑掩模片的夹具和联接到夹具的张紧器,用于向夹具施加张力并通过夹具均匀地固定掩模片。

    MASK DEFECT TESTING APPARATUS
    5.
    发明申请
    MASK DEFECT TESTING APPARATUS 失效
    掩蔽缺陷测试装置

    公开(公告)号:US20110061468A1

    公开(公告)日:2011-03-17

    申请号:US12762555

    申请日:2010-04-19

    申请人: Si-Young Park

    发明人: Si-Young Park

    IPC分类号: G01N3/08

    CPC分类号: G03F1/20 G03F1/84

    摘要: A mask defect test apparatus, including a tension jig unit having a supporter on which a metal mask to be tested is located, a clamp part disposed at both sides of the supporter to fix opposite edges of the metal mask, and a tension part to apply a tension force to the metal mask fixed by the clamp part; and a test unit to test the metal mask fixed by the tension jig unit. A vertical distance between the metal mask located on the supporter and the test unit is less than or equal to a vertical distance between the tension jig unit and the test unit.

    摘要翻译: 一种掩模缺陷测试装置,包括具有支撑体的张力夹具单元,所述支架上设有待测试的金属掩模,夹持部分设置在所述支撑件的两侧以固定所述金属掩模的相对边缘;以及张力部件, 由夹紧部固定的金属掩模的张力; 以及用于测试由张力夹具单元固定的金属掩模的测试单元。 位于支架上的金属掩模与测试单元之间的垂直距离小于或等于张力夹具单元与测试单元之间的垂直距离。

    METHOD AND APPARATUS FOR FABRICATING VERTICAL DEPOSITION MASK
    6.
    发明申请
    METHOD AND APPARATUS FOR FABRICATING VERTICAL DEPOSITION MASK 有权
    用于制造垂直沉积掩模的方法和装置

    公开(公告)号:US20090127236A1

    公开(公告)日:2009-05-21

    申请号:US12267442

    申请日:2008-11-07

    IPC分类号: B23K26/20

    CPC分类号: G03F7/12 C23C14/042

    摘要: A method and apparatus for fabricating a vertical deposition mask capable of welding a mask sheet and a mask frame for preventing a large area mask from drooping due to the weight of the mask. The apparatus includes a tensioning device for tensioning a mask sheet and a welder for attaching a mask frame to a circumference of the mask sheet. The tensioning device includes clamps for supporting the mask sheet and tensioners coupled to the clamps for applying tensile force to the clamps and to evenly fix in place the mask sheet by the clamps.

    摘要翻译: 一种用于制造能够焊接掩模片和掩模框的垂直沉积掩模的方法和装置,用于防止由于掩模的重量而使大面积掩模下垂。 该装置包括用于张紧掩模片的张紧装置和用于将掩模框架附接到掩模片的周边的焊工。 张紧装置包括用于支撑掩模片的夹具和联接到夹具的张紧器,用于向夹具施加张力并通过夹具均匀地固定掩模片。