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1.发明授权公开(公告)号：US08748310B2
公开(公告)日：2014-06-10
申请号：US13805023
申请日：2011-06-16
IPC分类号： H01L21/44
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/05 , Y02E10/50
摘要： A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.
摘要翻译： 一种用于制造光伏太阳能电池的金属接触结构的方法，包括：向半导体衬底施加非导电绝缘层，向所述绝缘层施加金属接触层，以及在所述绝缘层之间产生多个局部导电连接 半导体衬底和接触层直接通过绝缘层。 使用含有金属颗粒的两个糊料形成金属接触层：将第一糊料含有金属颗粒施加到局部区域，并且将第二糊料含有金属颗粒涂覆至少覆盖第一糊料覆盖的区域和位于其间的部分区域。 通过对半导体衬底进行全局加热，第一浆料穿透绝缘层并与半导体衬底直接形成导电触点，而第二焊膏不穿透绝缘层，并通过第一焊膏与半导体衬底电连接。
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2.发明申请METHOD FOR PRODUCING A METAL CONTACT STRUCTURE OF A PHOTOVOLTAIC SOLAR CELL 有权用于生产光伏太阳能电池的金属接触结构的方法公开(公告)号：US20130095604A1
公开(公告)日：2013-04-18
申请号：US13805023
申请日：2011-06-16
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/05 , Y02E10/50
摘要： A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.
摘要翻译： 一种用于制造光伏太阳能电池的金属接触结构的方法，包括：向半导体衬底施加非导电绝缘层，向所述绝缘层施加金属接触层，以及在所述绝缘层之间产生多个局部导电连接 半导体衬底和接触层直接通过绝缘层。 使用含有金属颗粒的两个糊料形成金属接触层：将第一糊料含有金属颗粒施加到局部区域，并且将第二糊料含有金属颗粒涂覆至少覆盖第一糊料覆盖的区域和位于其间的部分区域。 通过对半导体衬底进行全局加热，第一浆料穿透绝缘层并与半导体衬底直接形成导电触点，而第二焊膏不穿透绝缘层，并通过第一焊膏与半导体衬底电连接。
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公开(公告)号：US09087940B2
公开(公告)日：2015-07-21
申请号：US13810028
申请日：2011-07-11
申请人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
发明人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.
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公开(公告)号：US20130112262A1
公开(公告)日：2013-05-09
申请号：US13810028
申请日：2011-07-11
申请人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
发明人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.
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公开(公告)号：US20140026936A1
公开(公告)日：2014-01-30
申请号：US13982894
申请日：2012-01-26
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L27/1421 , H01L31/0682 , Y02E10/547
摘要： A photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, including at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlapping region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlapping region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.
摘要翻译： 一种用于将入射的电磁辐射转换为电能的光伏太阳能电池，包括在硅衬底中设计的至少一个基底掺杂类型的基极区域; 与基极掺杂型相反的掺杂类型的发射极掺杂型的至少一个发射极区域; 至少一个金属基底接触结构以导电方式连接到基极区域，以及至少一个金属发射极接触结构，其以导电方式连接到发射极区域，基极区域和发射极区域为 以这样的方式布置，使得至少在所述基极和发射极区域之间的一些区域中形成pn结。 重要的是，碱接触结构与基极旁路区域中的发射极区域重叠，并且在所述重叠区域中，在基极接触结构和发射极区域之间设计二极管状半导体接触，所述半导体接触是 金属半导体接触或/或金属 - 绝缘体 - 半导体接触，和/或发射极接触结构与发射极 - 旁路区域中的基极区域重叠，并且在该重叠区域中，二极管状半导体接触器设计在发射极 - 接触结构和基极区，所述半导体接触是金属半导体接触或金属 - 绝缘体 - 半导体接触。 本发明还涉及太阳能电池的制造方法。
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