Magneto-resistive head resistance sensor
    2.
    发明申请
    Magneto-resistive head resistance sensor 有权
    磁阻电阻传感器

    公开(公告)号:US20060152838A1

    公开(公告)日:2006-07-13

    申请号:US11034997

    申请日:2005-01-13

    IPC分类号: G11B5/09

    摘要: A recording system employing a magneto-resistive (MR) element senses a resistance value of the MR element and generates one or more MR resistance (MRR) signal values based on the sensed MR element resistance value. The MRR signal values might be, for example, current or voltage values proportional or inversely proportional to the MR element resistance value. The MRR signal values might be employed to control one or more of: i) a unity gain bandwidth of a bias loop for the MR element, ii) an MR read head preamplifier low corner frequency, and iii) a slew rate across the MR element.

    摘要翻译: 使用磁阻(MR)元件的记录系统感测MR元件的电阻值,并且基于感测的MR元件电阻值产生一个或多个MR电阻(MRR)信号值。 MRR信号值可以是例如与MR元件电阻值成比例或成反比的电流​​值或电压值。 可以采用MRR信号值来控制以下各项中的一个或多个:i)用于MR元件的偏置环路的单位增益带宽,ii)MR读取头前置放大器低转角频率,以及iii)横跨MR元件的转换速率 。

    ESD protection for differential mode magnetic transducer
    3.
    发明申请
    ESD protection for differential mode magnetic transducer 审中-公开
    差模式磁传感器的ESD保护

    公开(公告)号:US20050254158A1

    公开(公告)日:2005-11-17

    申请号:US10955237

    申请日:2004-09-30

    IPC分类号: G11B5/02 G11B5/11 G11B5/40

    CPC分类号: G11B5/02 G11B5/11 G11B5/40

    摘要: Use of a depletion mode MOSFET to protect differential terminals of a disk drive read head transducer from an electrostatic discharge event, wherein MOSFET source and drain terminals are connected to the differential terminals. The MOSFET is normally “on” such that a conductive path is provided between the differential signal terminals during assembly of the transducer into a disk drive data storage system and during periods when the transducer is inoperative. The conductive path, limits the differential voltage between the terminals that is generated by a current pulse of an ESD event. The MOSFET is gated off during operation of the disk drive to permit a differential read signal, representing the read data bits, to be developed between the differential terminals.

    摘要翻译: 使用耗尽型MOSFET来保护磁盘驱动器读头传感器的差动端子与静电放电事件,其中MOSFET源极和漏极端子连接到差分端子。 MOSFET通常“导通”,使得在将换能器组装到盘驱动器数据存储系统期间以及在换能器不工作的时段期间,在差分信号端子之间提供导电路径。 导电路径限制由ESD事件的电流脉冲产生的端子之间的差分电压。 在磁盘驱动器的操作期间,MOSFET被选通,以允许在差分端子之间形成表示读取数据位的差分读取信号。

    Optical midpoint power control and extinction ratio control of a semiconductor laser
    4.
    发明申请
    Optical midpoint power control and extinction ratio control of a semiconductor laser 有权
    半导体激光器的光中点功率控制和消光比控制

    公开(公告)号:US20050008050A1

    公开(公告)日:2005-01-13

    申请号:US10616334

    申请日:2003-07-09

    摘要: The present invention provides a method and apparatus, such as an integrated circuit, to control the optical midpoint power level and the extinction ratio of a semiconductor laser and maintain the optical midpoint power level and the extinction ratio substantially constant at corresponding predetermined levels. Apparatus embodiments include a semiconductor laser, a modulator, a photodetector, an optical midpoint controller, and an extinction ratio controller. The semiconductor laser is capable of transmitting an optical signal in response to a modulation current. The modulator is capable of providing the modulation current to the semiconductor laser, with the modulation current corresponding to an input data signal. The photodetector, which is optically coupled to the semiconductor laser, is capable of converting the optical signal into a photodetector current. In response to the photodetector current, the optical midpoint controller is capable of adjusting the forward bias current of the semiconductor laser, and the extinction ratio controller is capable of adjusting the modulation current provided by the modulator to the semiconductor laser, to respectively generate the optical signal having substantially a predetermined optical midpoint power level and a predetermined extinction ratio.

    摘要翻译: 本发明提供了一种诸如集成电路的方法和装置,用于控制半导体激光器的光中点功率电平和消光比,并将光中点功率电平和消光比保持在相应的预定电平上。 装置实施例包括半导体激光器,调制器,光电检测器,光中点控制器和消光比控制器。 半导体激光器能够响应于调制电流而发送光信号。 调制器能够向半导体激光器提供调制电流,调制电流对应于输入数据信号。 光学耦合到半导体激光器的光电检测器能够将光信号转换成光电检测器电流。 响应于光检测器电流,光中点控制器能够调节半导体激光器的正向偏置电流,并且消光比控制器能够调制由调制器提供给半导体激光器的调制电流,以分别产生光学 信号具有基本上预定的光中点功率电平和预定的消光比。

    EXTINCTION RATIO CONTROL OF A SEMICONDUCTOR LASER
    5.
    发明申请
    EXTINCTION RATIO CONTROL OF A SEMICONDUCTOR LASER 有权
    半导体激光器的放电比率控制

    公开(公告)号:US20050008280A1

    公开(公告)日:2005-01-13

    申请号:US10616332

    申请日:2003-07-09

    申请人: James Howley

    发明人: James Howley

    摘要: The present invention provides a method and apparatus, such as an integrated circuit, to control the extinction ratio of a semiconductor laser and maintain the extinction ratio substantially constant at a predetermined level. Apparatus embodiments include a semiconductor laser, a modulator, a photodetector, and an extinction ratio controller. The semiconductor laser is capable of transmitting an optical signal in response to a modulation current. The modulator is capable of providing the modulation current to the semiconductor laser, with the modulation current corresponding to an input data signal. The photodetector, which is optically coupled to the semiconductor laser, is capable of converting the optical signal into a photodetector current. The extinction ratio controller, in response to the photodetector current, is capable of adjusting the modulation current provided by the modulator to the semiconductor laser to generate the optical signal having substantially a predetermined extinction ratio.

    摘要翻译: 本发明提供了一种控制半导体激光器的消光比并将消光比保持在预定水平的方法和装置,例如集成电路。 装置实施例包括半导体激光器,调制器,光电检测器和消光比控制器。 半导体激光器能够响应于调制电流而发送光信号。 调制器能够向半导体激光器提供调制电流,调制电流对应于输入数据信号。 光学耦合到半导体激光器的光电检测器能够将光信号转换成光电检测器电流。 响应于光电检测器电流,消光比控制器能够将由调制器提供的调制电流调节到半导体激光器,以产生具有基本上预定消光比的光信号。