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公开(公告)号：US06791872B2
公开(公告)日：2004-09-14
申请号：US10652446
申请日：2003-08-29
IPC分类号： G11C1100
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06791857B2
公开(公告)日：2004-09-14
申请号：US10668442
申请日：2003-09-23
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
摘要翻译： 用于磁存储单元的写线结构包括写入导体，其具有面向存储单元的前表面，后表面和两个侧表面。 包覆层邻近写入导体的前表面的一部分设置，其中包层终止于与写入导体的前表面相邻的间隔开的第一和第二极。 数据存储层可操作地定位在包层附近。 极之间的距离小于写导体的宽度。 数据存储层的宽度可以大于或小于极之间的距离。
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公开(公告)号：US06661688B2
公开(公告)日：2003-12-09
申请号：US10005423
申请日：2001-12-05
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06724027B2
公开(公告)日：2004-04-20
申请号：US10125095
申请日：2002-04-18
IPC分类号： H01L2976
CPC分类号： H01L27/222 , Y10T428/26
摘要： A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.
摘要翻译： 磁性随机存取存储器模块包括磁存储器阵列。 可渗透的金属层在磁存储器阵列的第一侧上延伸。 电绝缘层设置在可渗透金属层和磁存储器阵列之间。
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公开(公告)号：US20070075181A1
公开(公告)日：2007-04-05
申请号：US11507725
申请日：2006-08-01
申请人： Darrel Bloomquist , Judy Bloomquist
发明人： Darrel Bloomquist , Judy Bloomquist
IPC分类号： B65H57/14
CPC分类号： B65H55/043 , G11B15/605 , G11B15/67
摘要： A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.
摘要翻译： 具有纹理表面的磁带引导件，带通过该导轨。 纹理表面具有超过表面上方的带的飞行高度的表面粗糙度。 这种新的不规则表面形状减少了空气轴承，并允许带引导件和带之间的有限接触，同时最小化其他表面形貌可能发生的带子变形。
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公开(公告)号：US20060032969A1
公开(公告)日：2006-02-16
申请号：US11231053
申请日：2005-09-20
申请人： Darrel Bloomquist , Judy Bloomquist
发明人： Darrel Bloomquist , Judy Bloomquist
IPC分类号： B65H57/04
CPC分类号： B65H55/043 , G11B15/605 , G11B15/67
摘要： A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.
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公开(公告)号：US20050111254A1
公开(公告)日：2005-05-26
申请号：US11021268
申请日：2004-12-23
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.
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公开(公告)号：US20060002183A1
公开(公告)日：2006-01-05
申请号：US11222623
申请日：2005-09-09
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.
摘要翻译： 本发明的实施例提供一种磁存储器。 在一个实施例中，磁存储器包括磁存储单元和配置成提供磁场以写入磁存储单元的导体。 结构被配置为引导磁场并降低磁存储单元的矫顽力。
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公开(公告)号：US20050001249A1
公开(公告)日：2005-01-06
申请号：US10612676
申请日：2003-07-02
申请人： Thomas Anthony , Colin Stobbs , Manoj Bhattaharyya , Anthony Holden , Darrel Bloomquist , Judy Bloomquist
发明人： Thomas Anthony , Colin Stobbs , Manoj Bhattaharyya , Anthony Holden , Darrel Bloomquist , Judy Bloomquist
IPC分类号： H01L27/10 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/76
CPC分类号： G11C11/15 , H01L27/222 , H01L2224/48091 , H01L2224/48247 , H01L2924/01078 , H01L2924/10253 , H01L2924/3025 , Y10T428/32 , Y10T428/325 , H01L2924/00014 , H01L2924/00
摘要： A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.
摘要翻译： 存储器件包括其上设置有存储器芯片的第一表面，存储器芯片限定存储器件的外表面以及与外表面相对的第二表面。 导磁屏蔽层在存储器件的外表面和第二表面中的至少一个上延伸。
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公开(公告)号：US06809958B2
公开(公告)日：2004-10-26
申请号：US10243469
申请日：2002-09-13
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A magnetic random access memory array includes a data storage layer having an easy axis. A non-linear first conductor is positioned on a first side of the data storage layer, wherein a portion of the first conductor has an angle of orientation that is perpendicular to the easy axis. A non-linear second conductor is positioned on a second side of the data storage layer, wherein a portion of the second conductor also has an angle of orientation that is perpendicular to the easy axis.
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