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14 条记录 (耗时 0.015 秒)

    Promoted liquid phase oxidation of alkyl aromatic compounds
    8.
    发明授权
    Promoted liquid phase oxidation of alkyl aromatic compounds 失效
    促进烷基芳族化合物的液相氧化

    公开(公告)号：US4048238A

    公开(公告)日：1977-09-13

    申请号：US620464

    申请日：1975-10-07

    申请人： Lloyd E. Gardner ,  Darryl R. Fahey ,  John E. Mahan

    发明人： Lloyd E. Gardner ,  Darryl R. Fahey ,  John E. Mahan

    IPC分类号： C07C29/09 ,  C07C45/36 ,  C07C67/05 ,  C07C27/12 ,  C07C29/00

    CPC分类号： C07C45/36 ,  C07C29/095 ,  C07C67/05

    摘要： A process is provided for oxygenating alkyl-substituted aromatic compounds. In the process alkyl-substituted aromatic compounds are contacted with molecular oxygen in the presence of a suitable monocarboxylic acid, an at least partially soluble Te or Se compound, an inorganic bromine compound, and a compound selected from inorganic nitrates and compounds convertible to inorganic nitrates at conditions of the process. In an embodiment of the invention the process is carried out in two distinct steps with contact of the alkyl-substituted aromatic compounds and oxygen in the presence of the essential components produce an ester comprising both an aromatic alcohol and the carboxylic acid with subsequent hydrolyzing of this ester to produce an aromatic alcohol with regeneration of the carboxylic acid.

    摘要翻译： 提供了对烷基取代的芳族化合物进行加氧的方法。 在此过程中，烷基取代的芳族化合物在合适的一元羧酸，至少部分可溶的Te或Se化合物，无机溴化合物和选自无机硝酸盐和可转化成无机硝酸盐的化合物的化合物存在下与分子氧接触 在该过程的条件下。 在本发明的一个实施方案中，该方法在两个不同的步骤中进行，其中烷基取代的芳族化合物和氧在必要组分存在下接触产生包含芳族醇和羧酸的酯，随后水解该 酯以产生具有羧酸再生的芳族醇。

    Semiconducting metal silicide radiation detectors and source
    9.
    发明授权
    Semiconducting metal silicide radiation detectors and source 失效
    半导体金属硅化物辐射探测器和源

    公开(公告)号：US4782377A

    公开(公告)日：1988-11-01

    申请号：US913354

    申请日：1986-09-30

    申请人： John E. Mahan

    发明人： John E. Mahan

    IPC分类号： G02B6/42 ,  H01L27/146 ,  H01L31/032 ,  H01L31/09 ,  H01L31/103 ,  H01L31/109 ,  H01L33/00 ,  H01L33/26 ,  H01L27/14 ,  G01T1/24

    CPC分类号： H01L33/26 ,  G02B6/4246 ,  G02B6/4249 ,  G02B6/4295 ,  H01L27/14649 ,  H01L31/032 ,  H01L31/09 ,  H01L31/103 ,  H01L31/109 ,  H01L33/002 ,  H01L2924/0002

    摘要： Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic semiconductors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting metal silicide devices are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission preveously known. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.

    摘要翻译： 半导体金属硅化物电磁辐射源和检测器具有生长或沉积在硅晶片上的半导体金属硅化物薄膜。 金属选自铁，铱，锰，铬，铼，钡，钙，镁和锇。 检测器是本征半导体，并且可以作为分立器件形成，或者单片地形成在硅芯片上，以提供集成的检测器或检测器阵列。 半导体金属硅化物器件是与某些光纤的传输能力相匹配的波长的有效检测器，其增强了红外探测器和普遍已知的光纤传输的组合。 二硅化铁可用作红外辐射源和外部检测器。

    Semiconducting metal silicide radiation detectors
    10.
    发明授权
    Semiconducting metal silicide radiation detectors 失效
    半导体金属硅化物辐射探测器

    公开(公告)号：US4940898A

    公开(公告)日：1990-07-10

    申请号：US189310

    申请日：1988-05-02

    申请人： John E. Mahan

    发明人： John E. Mahan

    IPC分类号： G02B6/42 ,  H01L27/146 ,  H01L31/032 ,  H01L31/09 ,  H01L31/103 ,  H01L31/109 ,  H01L33/00 ,  H01L33/26

    CPC分类号： H01L33/26 ,  G02B6/4246 ,  G02B6/4249 ,  G02B6/4295 ,  H01L27/14649 ,  H01L31/032 ,  H01L31/09 ,  H01L31/103 ,  H01L31/109 ,  H01L33/002

    摘要： Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.

    摘要翻译： 半导体金属硅化物电磁辐射探测器具有生长或沉积在硅晶片上的半导体金属硅化物薄膜，例如二硅化铼。 检测器是本征半导体检测器，并且可以形成为分立器件，或者单片地形成在硅芯片上，以提供集成的检测器或检测器阵列。 半导体铼二硅化物检测器在与某些光纤的传输能力相匹配的波长下是有效的，从而增强红外检测器和先前已知的光纤传输的组合。 由这些铼二硅化物检测器检测的电磁辐射的范围包括高达14微米的波长的红外范围。