Constant current mode firing circuit for thermal inkjet-printing nozzle
    3.
    发明申请
    Constant current mode firing circuit for thermal inkjet-printing nozzle 有权
    用于热喷墨打印喷嘴的恒流模式点火电路

    公开(公告)号:US20060262156A1

    公开(公告)日:2006-11-23

    申请号:US11134015

    申请日:2005-05-20

    IPC分类号: B41J29/38

    摘要: A firing circuit for a thermal inkjet-printing nozzle includes a heater resistor and a switch. The heater resistor heats ink to cause the ink to be ejected from the nozzle. The heater resistor has a first end and a second end, the second end connected to a ground. The switch controls activation of the heater resistor. The switch has a first end connected to a voltage source and a second end connected to the first end of the heater resistor. The switch operates in a constant current mode, such that an at least substantially constant current flows through the heater resistor upon activation.

    摘要翻译: 用于热喷墨打印喷嘴的点火电路包括加热电阻器和开关。 加热电阻加热墨水使墨水从喷嘴喷出。 加热电阻器具有第一端和第二端,第二端连接到地。 开关控制加热电阻的激活。 开关具有连接到电压源的第一端和连接到加热电阻器的第一端的第二端。 开关工作在恒定电流模式,使得至少基本上恒定的电流在激活时流过加热电阻器。

    Cell type determination of battery under charge conditions
    4.
    发明授权
    Cell type determination of battery under charge conditions 失效
    充电条件下电池的电池类型测定

    公开(公告)号:US5489835A

    公开(公告)日:1996-02-06

    申请号:US227484

    申请日:1994-04-14

    IPC分类号: G01R31/36 H02J7/00 H01M10/44

    摘要: The cell type (i.e. alkaline, Ni-Cd, etc.) of a battery is determined by reference to characteristics of its electrical behavior during charging. Exemplary characteristics include the magnitude of the initial voltage rise and the rate of initial voltage rise. Depending on the outcome of this determination, the charging conditions can be changed (e.g. the charging current can be interrupted if the cell is determined to be a non-rechargeable type). The invention finds particular utility in connection with electronic products such as calculators and portable computers.

    摘要翻译: 电池的电池类型(即碱性,Ni-Cd等)参照充电时的电气特性的特性来确定。 示例性特征包括初始电压升高的幅度和初始电压上升率。 根据该确定的结果,可以改变充电条件(例如,如果电池被确定为不可再充电电池,充电电流可以被中断)。 本发明特别适用于诸如计算器和便携式计算机之类的电子产品。

    Transistor device
    5.
    发明申请
    Transistor device 失效
    晶体管器件

    公开(公告)号:US20070090454A1

    公开(公告)日:2007-04-26

    申请号:US11259335

    申请日:2005-10-26

    IPC分类号: H01L29/76

    摘要: A transistor device is provided, including a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region. The source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.

    摘要翻译: 提供一种晶体管器件,包括第一类型的半导体材料的轻掺杂层和第二类半导体材料的体区。 第一类型的源区域形成在身体区域中。 源极区域比轻掺杂层更加掺杂。 第一类型的漏极区形成在轻掺杂层中,漏区比轻掺杂层更加掺杂。 进一步提供轻体掺杂层的漂移区域,设置在体区和漏区之间。 此外,围绕漏极区域设置栅电极。 栅电极部分地设置在薄氧化物上并且部分地设置在厚氧化物上,其中从薄氧化物延伸到厚氧化物上的栅极电极控制漂移区域中的电场,以增加漏极区域的雪崩击穿。