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公开(公告)号：US06611007B2
公开(公告)日：2003-08-26
申请号：US10140824
申请日：2002-05-09
IPC分类号： H01L310328
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/182 , H01L29/155 , H01L29/201 , H01L33/30 , H01S5/0265 , H01S5/2068 , H01S5/2072 , H01S5/3414 , Y10S257/929
摘要： A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsP quantum well structures. The novel quantum well intermixing technique is applied to the modulator section of an integrated DFB laser/electro-absorption modulator, wherein the modulator exhibits fast switching times with efficient optical coupling between the DFB laser and modulator region.
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2.发明授权Quantum well intermixing in InGaAsP structures induced by low temperature grown InP 失效量子井混合InGaAsP结构诱导低温生长InP公开(公告)号：US06797533B2
公开(公告)日：2004-09-28
申请号：US10264316
申请日：2002-10-04
IPC分类号： H01L2100
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/182 , H01L29/155 , H01L29/201 , H01L33/30 , H01S5/0265 , H01S5/2068 , H01S5/2072 , H01S5/3414
摘要： A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.
摘要翻译： 具有砷化铟镓（InGaAsP）量子阱有源区的量子阱结构具有在其上生长的低温生长的磷化铟（LT-InP）覆盖层。 通过快速热退火将盖层中的缺陷混合到量子阱有源区域中，以在有源区域中产生蓝移。 随着LT-InP覆盖层的生长温度降低或LT-InP层的生产期间的磷化氢流速增加，蓝移增加。
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