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    Light emitting device and method of manufacturing the same
    1.
    发明申请
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US20050012105A1

    公开(公告)日：2005-01-20

    申请号：US10918419

    申请日：2004-08-16

    申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Masakazu Murakami ,  Hideaki Kuwabara

    发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Masakazu Murakami ,  Hideaki Kuwabara

    IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L31/12

    CPC分类号： H01L27/3248 ,  H01L27/3211 ,  H01L27/3216 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5212 ,  H01L51/5228 ,  H01L51/5253 ,  H01L2251/5315 ,  Y10S257/929

    摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

    摘要翻译： 通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。 根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20） 与辅助电极接触可以使电阻较小，薄。 此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。 此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。

    LCD panel
    2.
    发明授权
    LCD panel 有权
    液晶显示面板

    公开(公告)号：US06787829B2

    公开(公告)日：2004-09-07

    申请号：US09980633

    申请日：2001-12-05

    申请人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Michiko Okafuji ,  Satoshi Asada

    发明人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Michiko Okafuji ,  Satoshi Asada

    IPC分类号： H01L31062

    CPC分类号： G02F1/134363 ,  G02F1/133512 ,  Y10S257/929

    摘要： A liquid crystal display panel of the invention is such that, in a pixel region defined by a region of the array substrate surrounded by a pair of image signal lines and a pair of scanning signal lines, of a line-shaped pixel electrode and a common electrode, the electrode that is disposed adjacent to and parallel to a signal line is made of an opaque conductor and at least one of the other electrodes is made of a transparent conductor. Adverse effects of the electric field formed between a signal line and an adjacent electrode thereto are suppressed and a sufficient aperture ratio is ensured by using a transparent conductor for the electrode contributing good display.

    摘要翻译： 本发明的液晶显示面板使得在由一对图像信号线和一对扫描信号线围绕的阵列基板的区域限定的像素区域中，线状像素电极和共同的 电极，与信号线相邻并平行配置的电极由不透明导体构成，其他电极中的至少一方由透明导体构成。 抑制在信号线和相邻电极之间形成的电场的不利影响，并且通过使用用于提供良好显示的电极的透明导体来确保足够的开口率。

    Liquid crystal display panel
    4.
    发明申请
    Liquid crystal display panel 有权
    液晶显示面板

    公开(公告)号：US20020176043A1

    公开(公告)日：2002-11-28

    申请号：US09980633

    申请日：2001-12-05

    发明人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Michiko Okafuji ,  Satoshi Asada

    IPC分类号： G02F001/1343

    CPC分类号： G02F1/134363 ,  G02F1/133512 ,  Y10S257/929

    摘要： A liquid crystal display panel of the invention is such that, in a pixel region defined by a region of the array substrate surrounded by a pair of image signal lines and a pair of scanning signal lines, of a line-shaped pixel electrode and a common electrode, the electrode that is disposed adjacent to and parallel to a signal line is made of an opaque conductor and at least one of the other electrodes is made of a transparent conductor. Adverse effects of the electric field formed between a signal line and an adjacent electrode thereto are suppressed and a sufficient aperture ratio is ensured by using a transparent conductor for the electrode contributing good display.

    摘要翻译： 本发明的液晶显示面板使得在由一对图像信号线和一对扫描信号线围绕的阵列基板的区域限定的像素区域中，线状像素电极和共同的 电极，与信号线相邻并平行配置的电极由不透明导体构成，其他电极中的至少一方由透明导体构成。 抑制在信号线和相邻电极之间形成的电场的不利影响，并且通过使用用于提供良好显示的电极的透明导体来确保足够的开口率。

    Semiconductor memory device with trench capacitor
    5.
    发明授权
    Semiconductor memory device with trench capacitor 失效
    具有沟槽电容器的半导体存储器件

    公开(公告)号：US5701022A

    公开(公告)日：1997-12-23

    申请号：US192188

    申请日：1994-02-04

    申请人： Walter-Ulrich Kellner ,  Karl-Heinz Kusters ,  Wolfgang Muller ,  Franz-Xaver Stelz

    发明人： Walter-Ulrich Kellner ,  Karl-Heinz Kusters ,  Wolfgang Muller ,  Franz-Xaver Stelz

    IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/10861 ,  H01L27/10829 ,  H01L27/10844 ,  Y10S257/929

    摘要： A semiconductor memory configuration in a semiconductor substrate includes bit lines, word lines, and memory cells each including one memory capacitor and one MOS selection transistor having two conducting regions and a gate electrode. Each memory capacitor is connected to one of the conducting regions of the transistor. The other of the conducting regions of the transistor is connected to one of the bit lines, and the gate electrode of the transistor is connected to one of the word lines. An insulating field oxide or buried insulating oxide with substantially vertical sidewalls is provided. A trench lies adjacent to the insulating field oxide or buried insulating oxide and adjacent to one of the conducting regions. The capacitors are each disposed in one trench for each memory cell. A first insulating layer covers the inner trench wall surface. A first electrode of the capacitor is disposed perpendicular to the substrate surface on the first insulating layer completely inside the trench. A second insulating layer is disposed on the first electrode. A second electrode is disposed vertically on the second insulating layer in the trench. A contact is connected between the first electrode of the capacitor and one of the conducting regions of the transistor laterally through an opening formed in the first insulating layer on the inner trench wall surface. Methods for producing the semiconductor memory configuration and a memory matrix having at least four of the memory cells, are also provided.

    摘要翻译： 半导体衬底中的半导体存储器配置包括位线，字线和存储单元，每个存储单元包括一个存储电容器和一个具有两个导电区域的MOS选择晶体管和一个栅电极。 每个存储电容器连接到晶体管的一个导电区域。 晶体管的另一个导通区域连接到位线之一，并且晶体管的栅电极连接到一条字线。 提供具有基本上垂直侧壁的绝缘场氧化物或掩埋绝缘氧化物。 沟槽位于绝缘场氧化物或掩埋绝缘氧化物附近，并且与导电区域之一相邻。 电容器各自设置在每个存储单元的一个沟槽中。 第一绝缘层覆盖内沟壁表面。 电容器的第一电极在沟槽内完全垂直于第一绝缘层上的衬底表面设置。 第二绝缘层设置在第一电极上。 第二电极垂直地设置在沟槽中的第二绝缘层上。 接触件通过形成在内沟槽壁表面上的第一绝缘层中的开口横向连接在电容器的第一电极和晶体管的导电区域中的一个之间。 还提供了用于制造半导体存储器配置的方法和具有至少四个存储单元的存储器矩阵。

    Method of producing semiconductor device having first and second type field effect transistors
    6.
    发明授权
    Method of producing semiconductor device having first and second type field effect transistors 失效
    制造具有第一和第二类场效应晶体管的半导体器件的方法

    公开(公告)号：US5478761A

    公开(公告)日：1995-12-26

    申请号：US86449

    申请日：1993-07-06

    申请人： Shigeki Komori ,  Katsuhiro Tsukamoto

    发明人： Shigeki Komori ,  Katsuhiro Tsukamoto

    IPC分类号： H01L27/092 ,  H01L21/265

    CPC分类号： H01L27/0928 ,  Y10S257/929

    摘要： A complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same are disclosed. The complementary field effect element includes a high concentration impurity layer (16) formed by ion implantation in the boundary region between a P-well (2) and an N-well (3) which are formed adjacent each other on the main surface of a semiconductor substrate (1). Therefore, carriers passing through the boundary region between the P-well (2) and the N-well (3) are decreased, so that even if the distance between the emitters (4, 5) of parasitic transistors is short, there is obtained an intensified latch-up preventive property.

    摘要翻译： 即使寄生晶体管的发射极之间的距离短，互补的场效应元件也产生增强的防闩锁特性，并且公开了其制造方法。 互补场效应元件包括在P阱（2）和N阱（3）之间的边界区域中通过离子注入形成的高浓度杂质层（16），它们彼此相邻地形成在 半导体衬底（1）。 因此，穿过P阱（2）和N阱（3）之间的边界区域的载流子减少，使得即使寄生晶体管的发射极（4,5）之间的距离较短，也可获得 增强了防闩锁性能。

    Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves
    7.
    发明授权
    Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves 失效
    半导体存储器件，字线与电容器槽相邻且不相交

    公开(公告)号：US4961095A

    公开(公告)日：1990-10-02

    申请号：US314242

    申请日：1989-02-22

    申请人： Koichiro Mashiko

    发明人： Koichiro Mashiko

    IPC分类号： H01L27/10 ,  G11C11/4097 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10829 ,  G11C11/4097 ,  Y10S257/929

    摘要： A grooved separating region 112 having information electric charge storing capacitances C.sub.P formed on side surfaces thereof is formed to extend the region between the adjacent word line 107 in parallel with the word line 107. As a result, the grooved separating region 112 does not contact the channel region 111 of the gate transistors and does not intersect the word line 107.

    摘要翻译： 形成有形成在其侧表面上的信息电荷存储电容CP的带槽分离区域112，以使得相邻字线107之间的区域与字线107平行地延伸。结果，带槽分隔区域112不接触 沟道区域111，并且不与字线107相交。

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20100230664A1

    公开(公告)日：2010-09-16

    申请号：US12724475

    申请日：2010-03-16

    申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Masakazu Murakami ,  Hideaki Kuwabara

    发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Masakazu Murakami ,  Hideaki Kuwabara

    IPC分类号： H01L51/52

    CPC分类号： H01L27/3248 ,  H01L27/3211 ,  H01L27/3216 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5212 ,  H01L51/5228 ,  H01L51/5253 ,  H01L2251/5315 ,  Y10S257/929

    摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

    摘要翻译： 通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。 根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20） 与辅助电极接触可以使电阻较小，薄。 此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。 此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。