公开(公告)号：US10989767B2

公开(公告)日：2021-04-27

申请号：US17065373

申请日：2020-10-07

申请人： David George Ferguson ,  Sergey S. Novikov ,  Anthony Joseph Przybysz ,  Robert T. Hinkey ,  Aaron A. Pesetski ,  Kenneth M. Zick

发明人： David George Ferguson ,  Sergey S. Novikov ,  Anthony Joseph Przybysz ,  Robert T. Hinkey ,  Aaron A. Pesetski ,  Kenneth M. Zick

IPC分类号： G01R33/035 ,  H01L39/22 ,  G06N10/00

摘要： One example includes a tunable current element. The element includes a first magnetic flux component that is configured to exhibit a bias flux in response to a first control current. The bias flux can decrease relative energy barriers between discrete energy states of the tunable current element. The element also includes a second magnetic flux component that is configured to exhibit a control flux in response to a second control current. The control flux can change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states, such that the magnetic flux component is configured to generate a hysteretic current that provides a magnetic flux at an amplitude corresponding to the energy state of the tunable current element.

公开(公告)号：US10852366B2

公开(公告)日：2020-12-01

申请号：US16019210

申请日：2018-06-26

申请人： David George Ferguson ,  Sergey S. Novikov ,  Anthony Joseph Przybysz ,  Robert T. Hinkey ,  Aaron A. Pesetski ,  Kenneth M. Zick

发明人： David George Ferguson ,  Sergey S. Novikov ,  Anthony Joseph Przybysz ,  Robert T. Hinkey ,  Aaron A. Pesetski ,  Kenneth M. Zick

IPC分类号： G01R33/035 ,  G06N10/00 ,  H01L39/22

摘要： One example includes a magnetic flux source system that includes a tunable current element. The tunable current element includes a SQUID inductively coupled to a first control line that conducts a first control current that induces a bias flux in the SQUID to decrease relative energy barriers between discrete energy states of the tunable current element. The system also includes an inductor in a series loop with the SQUID and inductively coupled to a second control line that conducts a second control current that induces a control flux in the series loop to change a potential energy of the discrete energy states of the tunable current element to set an energy state of the tunable current element to one of the discrete energy states to generate a current that provides a magnetic flux at an amplitude corresponding to the energy state of the at least one tunable current element.

公开(公告)号：US08929417B2

公开(公告)日：2015-01-06

申请号：US12975008

申请日：2010-12-21

申请人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

发明人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

IPC分类号： H01S5/00 ,  H01S3/14 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32

CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/1046 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3402 ,  H01S5/3422 ,  H01S5/343

摘要： A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

摘要翻译： 一种半导体区带激光器，其包括使用具有第一折射率/介电常数的第一高掺杂半导体材料形成的第一覆层和使用具有第二折射率/介电常数的第二高掺杂半导体材料形成的第二覆层。 激光器还包括具有波导芯折射率/介电常数的波导芯，波导芯位于第一和第二覆层之间。 波导芯包括适于基于带间跃迁产生光的有源区。 产生的光定义了激光波长或激光频率。 第一折射率和第二折射率低于波导芯折射率。 第一覆层和/或第二覆层也可以使用金属形成。

公开(公告)号：US20120044964A1

公开(公告)日：2012-02-23

申请号：US12975008

申请日：2010-12-21

申请人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

发明人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

IPC分类号： H01S5/323

CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/1046 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3402 ,  H01S5/3422 ,  H01S5/343

摘要： A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

摘要翻译： 一种半导体区带激光器，其包括使用具有第一折射率/介电常数的第一高掺杂半导体材料形成的第一覆层和使用具有第二折射率/介电常数的第二高掺杂半导体材料形成的第二覆层。 激光器还包括具有波导芯折射率/介电常数的波导芯，波导芯位于第一和第二覆层之间。 波导芯包括适于基于带间跃迁产生光的有源区。 产生的光定义了激光波长或激光频率。 第一折射率和第二折射率低于波导芯折射率。 第一覆层和/或第二覆层也可以使用金属形成。