公开(公告)号：US4482863A

公开(公告)日：1984-11-13

申请号：US292438

申请日：1981-08-14

申请人： David H. Auston ,  Peter R. Smith

发明人： David H. Auston ,  Peter R. Smith

IPC分类号： G01R31/265 ,  G01R31/308 ,  G01R31/26

CPC分类号： G01R31/2656 ,  G01R31/308

摘要： Direct measurements of electronic device and material response times are made by using high speed photoconductors as both pulse generators and sampling gates.

摘要翻译： 通过使用高速光电导体作为脉冲发生器和采样门，进行电子器件和材料响应时间的直接测量。

公开(公告)号：US4155779A

公开(公告)日：1979-05-22

申请号：US935665

申请日：1978-08-21

申请人： David H. Auston ,  Jene A. Golovchenko ,  Richart E. Slusher ,  Clifford M. Surko ,  Thirumalai N. C. Venkatesan

发明人： David H. Auston ,  Jene A. Golovchenko ,  Richart E. Slusher ,  Clifford M. Surko ,  Thirumalai N. C. Venkatesan

IPC分类号： H01L21/263 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/26

CPC分类号： H01L21/268 ,  H01L21/2022 ,  Y10S148/09 ,  Y10S148/093 ,  Y10S438/965

摘要： Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can be used to control the annealing process. Various control mechanisms are described.

摘要翻译： {PG，1多晶和非晶半导体可以使用激光或电子束进行退火，以通过晶体衬底上的外延再生长恢复或获得晶体顺序。 当通过液相外延进行退火时，可以使用在退火区域的熔融状态的存在和寿命来控制退火过程。 描述各种控制机制。

公开(公告)号：US5420595A

公开(公告)日：1995-05-30

申请号：US144724

申请日：1993-10-28

申请人： Xi-Cheng Zhang ,  David H. Auston

发明人： Xi-Cheng Zhang ,  David H. Auston

IPC分类号： H01Q3/26 ,  H01Q3/44 ,  H01Q3/22 ,  H01Q1/06 ,  H01Q3/24

CPC分类号： H01Q3/44 ,  H01Q3/2676

摘要： A source of collimated beam or beams of microwave electromagnetic radiation pulses comprises a photoconductor substrate having a major surface and an optical radiation source providing a beam of optical radiation pulses for illuminating at least a relatively large aperture region of the major surface. A static electric field, intrinsic or applied, is present at the major surface for driving transient photocurrents generated by the beam of optical radiation pulses. Each beam of microwave electromagnetic radiation pulses emitted from the photoconductor substrate may be steered by varying the angle of incidence of the beam of optical radiation pulses illuminating the major surface, by varying the period of the spatial variation of a static electric field applied to the major surface by means of electrodes, or by varying the period or direction of a periodic intensity variation of a spatially modulated beam of optical radiation pulses on the major surface.

摘要翻译： 微波电磁辐射脉冲的准直光束或光束的源包括具有主表面的光电导体基底和提供用于照射主表面的至少相对大的开口区域的光辐射脉冲束的光辐射源。 固有或应用的静电场存在于主表面上，用于驱动由光辐射脉冲束产生的瞬态光电流。 通过改变施加到主表面的静电场的空间变化的周期，可以通过改变照射主表面的光辐射脉冲束的入射角来控制从感光体基板发射的每束微波电磁辐射脉冲 或通过改变在主表面上的空间调制光束的光辐射脉冲的周期性强度变化的周期或方向。

公开(公告)号：US4326126A

公开(公告)日：1982-04-20

申请号：US107901

申请日：1979-12-28

申请人： David H. Auston

发明人： David H. Auston

IPC分类号： H01L31/0376 ,  H01L31/09 ,  H01J40/14

CPC分类号： H01L31/03762 ,  H01L31/095 ,  Y02E10/548

摘要： A high speed photodetector using an amorphous semiconductor, such as silicon, and having a localized state density of at least 10.sup.18 /cm.sup.3 is described. The amorphous silicon may be prepared by evaporation or chemical vapor deposition or sputtering.

摘要翻译： 描述了使用诸如硅的非晶半导体并且具有至少1018 / cm3的局部状态密度的高速光电探测器。 非晶硅可以通过蒸发或化学气相沉积或溅射来制备。

公开(公告)号：US4234356A

公开(公告)日：1980-11-18

申请号：US44663

申请日：1979-06-01

申请人： David H. Auston ,  Jene A. Golovchenko ,  Thirumalai N. C. Venkatesan

发明人： David H. Auston ,  Jene A. Golovchenko ,  Thirumalai N. C. Venkatesan

IPC分类号： H01L21/268 ,  H01L21/263

CPC分类号： H01L21/268 ,  Y10S117/904 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093

摘要： A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.

摘要翻译： 公开了一种新的光学退火模式，其中使用两种不同的波长脉冲对损坏的半导体衬底进行退火。 第一脉冲的强度可能相对较弱，但被固体基质强烈地吸收。 当处于固相时，不被固体基质强烈吸收的第二脉冲在熔融相中被基底强烈地吸收。 暴露于第一脉冲导致衬底的熔化，其然后在第二脉冲的波长处变得对于高的吸收性。 因此，可以有效地利用通常不被固相中的半导体高度吸收的易于获得的激光源。