利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

43 条记录 (耗时 0.023 秒)

    Dual wavelength optical annealing of materials
    2.
    发明授权
    Dual wavelength optical annealing of materials 失效
    材料的双波长光学退火

    公开(公告)号：US4234356A

    公开(公告)日：1980-11-18

    申请号：US44663

    申请日：1979-06-01

    申请人： David H. Auston ,  Jene A. Golovchenko ,  Thirumalai N. C. Venkatesan

    发明人： David H. Auston ,  Jene A. Golovchenko ,  Thirumalai N. C. Venkatesan

    IPC分类号： H01L21/268 ,  H01L21/263

    CPC分类号： H01L21/268 ,  Y10S117/904 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093

    摘要： A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.

    摘要翻译： 公开了一种新的光学退火模式，其中使用两种不同的波长脉冲对损坏的半导体衬底进行退火。 第一脉冲的强度可能相对较弱，但被固体基质强烈地吸收。 当处于固相时，不被固体基质强烈吸收的第二脉冲在熔融相中被基底强烈地吸收。 暴露于第一脉冲导致衬底的熔化，其然后在第二脉冲的波长处变得对于高的吸收性。 因此，可以有效地利用通常不被固相中的半导体高度吸收的易于获得的激光源。

    Controlled fabrication of gaps in electrically conducting structures
    6.
    发明授权
    Controlled fabrication of gaps in electrically conducting structures 有权
    控制导电结构间隙的制造

    公开(公告)号：US07582490B2

    公开(公告)日：2009-09-01

    申请号：US10767102

    申请日：2004-01-29

    申请人： Jene A. Golovchenko ,  Gregor M. Schürmann ,  Gavin M. King ,  Daniel Branton

    发明人： Jene A. Golovchenko ,  Gregor M. Schürmann ,  Gavin M. King ,  Daniel Branton

    IPC分类号： H01L21/00 ,  C23C14/00 ,  G01N35/08 ,  G01N35/00 ,  H01L29/78

    CPC分类号： G01N33/48721 ,  Y10T436/11 ,  Y10T436/12

    摘要： A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

    摘要翻译： 一种用于控制具有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件，其条件被选择以改变间隙的程度。 在将结构暴露于工艺环境中时，跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流，并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极头。 电极暴露于离子通量，导致电极的材料传输到相应的电极尖端，将电极的材料局部地添加到间隙中的电极尖端。

    Capture, recapture, and trapping of molecules with a nanopore
    8.
    发明授权
    Capture, recapture, and trapping of molecules with a nanopore 有权
    用纳米孔捕获，重新捕获和捕获分子

    公开(公告)号：US08273532B2

    公开(公告)日：2012-09-25

    申请号：US12286787

    申请日：2008-10-02

    申请人： Marc H. Gershow ,  Jene A. Golovchenko ,  Daniel Branton

    发明人： Marc H. Gershow ,  Jene A. Golovchenko ,  Daniel Branton

    IPC分类号： C12Q1/68 ,  C12M1/00 ,  G01N15/06 ,  C07H21/04

    CPC分类号： C12Q1/6825 ,  C12Q1/6869 ,  G01N33/48721 ,  C12Q2565/631 ,  C12Q2565/607

    摘要： In a molecular analysis system, there is provided a structure including a nanopore and first and second fluidic reservoirs. The two reservoirs are fluidically connected via the nanopore. A detector is connected to detect molecular species translocation of the nanopore, from one of the two fluidic reservoirs to the other of the two fluidic reservoirs. A controller is connected to generate a control signal to produce conditions at the nanopore to induce the molecular species to re-translocate the nanopore at least once after translocating the nanopore. This enables a method for molecular analysis in which a molecular species is translocated a plurality of times through a nanopore in a structure between two fluidic reservoirs separated by the structure.

    摘要翻译： 在分子分析系统中，提供了包括纳米孔和第一和第二流体储层的结构。 两个储存器通过纳米孔流体连接。 连接检测器以检测纳米孔的分子物质易位，从两个流体储存器中的一个到两个流体储存器中的另一个。 连接控制器以产生控制信号以在纳米孔上产生条件以诱导分子种类在易位纳米孔之后至少一次地转移纳米孔。 这使得分子分析方法能够通过分子物质在被结构分离的两个流体储存器之间的结构中的纳米孔中多次转位。

    Nanometric Material Having a Nanopore Enabling High-Sensitivity Molecular Detection and Analysis
    9.
    发明申请
    Nanometric Material Having a Nanopore Enabling High-Sensitivity Molecular Detection and Analysis 审中-公开
    具有纳米孔的纳米材料实现高灵敏度分子检测和分析

    公开(公告)号：US20120234679A1

    公开(公告)日：2012-09-20

    申请号：US13419383

    申请日：2012-03-13

    申请人： Slaven Garaj ,  Jene A. Golovchenko ,  Daniel Branton

    发明人： Slaven Garaj ,  Jene A. Golovchenko ,  Daniel Branton

    IPC分类号： G01N27/447 ,  G01N27/453 ,  B82Y5/00 ,  B82Y30/00 ,  B82Y99/00

    摘要： There is provided a substantially bare, self-supported single-layer graphene membrane including a nanopore extending through a thickness of the graphene membrane from a first to a second membrane surface opposite the first graphene membrane surface. A connection from the first graphene membrane surface to a first reservoir provides, at the first graphene membrane surface, a species in an ionic solution to the nanopore, and a connection from the second graphene membrane surface to a second reservoir is provided to collect the species and ionic solution after translocation of the species and ionic solution through the nanopore from the first graphene membrane surface to the second graphene membrane surface. An electrical circuit is connected on opposite sides of the nanopore to measure flow of ionic current through the nanopore in the graphene membrane.

    摘要翻译： 提供了基本上裸露的自支撑单层石墨烯膜，其包括从第一至第二膜表面延伸穿过石墨烯膜的厚度的纳米孔，所述第一膜表面与第一石墨烯膜表面相对。 从第一石墨烯膜表面到第一储存器的连接在第一石墨烯膜表面处提供离子溶液中的物质到纳米孔，并且提供从第二石墨烯膜表面到第二储存器的连接以收集物种 和离子溶液在物种和离子溶液通过纳米孔从第一石墨烯膜表面转移到第二石墨烯膜表面之后。 电路连接在纳米孔的相对侧，以测量通过石墨烯膜中的纳米孔的离子电流的流动。

    Nanotube Processing Employing Solid-Condensed-Gas-Layers
    10.
    发明申请
    Nanotube Processing Employing Solid-Condensed-Gas-Layers 有权
    使用固体 - 气相层的纳米管加工

    公开(公告)号：US20090179005A1

    公开(公告)日：2009-07-16

    申请号：US12409580

    申请日：2009-03-24

    申请人： Jene A. Golovchenko ,  Gavin M. King ,  Gregor M. Schurmann ,  Daniel Branton

    发明人： Jene A. Golovchenko ,  Gavin M. King ,  Gregor M. Schurmann ,  Daniel Branton

    IPC分类号： C23F1/00

    CPC分类号： C23C14/06 ,  B82Y10/00 ,  C23C14/5873 ,  H01J37/3005 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/02238 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31662 ,  H01L21/3185 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/891

    摘要： In a method for processing a nanotube, a vapor is condensed to a solid condensate layer on a surface of the nanotube and then at least one selected region of the condensate layer is locally removed by directing a beam of energy at the selected region. The nanotube can be processed with at least a portion of the solid condensate layer maintained on the nanotube surface and thereafter the solid condensate layer removed. Nanotube processing can include, e.g., depositing a material layer on an exposed nanotube surface region where the condensate layer was removed. After forming a solid condensate layer, an electron beam can be directed at a selected region along a nanotube length corresponding to a location for cutting the nanotube, to locally remove the condensate layer at the region, and an ion beam can be directed at the selected region to cut the nanotube at the selected region.

    摘要翻译： 在用于处理纳米管的方法中，蒸汽被冷凝到纳米管表面上的固体冷凝物层，然后通过在所选择的区域引导能量束来局部去除冷凝物层的至少一个选定区域。 纳米管可以用保持在纳米管表面上的固体冷凝物层的至少一部分进行处理，然后除去固体冷凝物层。 纳米管加工可以包括例如在去除冷凝物层的暴露的纳米管表面区域上沉积材料层。 在形成固体冷凝物层之后，电子束可以沿着与用于切割纳米管的位置相对应的纳米管长度的选定区域被引导，以在该区域局部移除冷凝物层，并且离子束可以被引导到所选择的 区域以在所选区域切割纳米管。