Low Leak O-Ring Seal
    1.
    发明申请
    Low Leak O-Ring Seal 审中-公开
    低泄漏O型圈密封

    公开(公告)号:US20080029972A1

    公开(公告)日:2008-02-07

    申请号:US11658112

    申请日:2005-10-07

    IPC分类号: F16J15/06

    CPC分类号: F16J15/062

    摘要: A vacuum seal (1) having an O-ring (12) between two mating parts (2) (6). One of the mating parts has a groove (10) configured to receive the O-ring (12). The groove (10) has a modified dovetail shape with at least one side wall (14) having a compound slope formed with a first portion (22) forming an angle of less than 90 degrees with respect to a base wall (18) and a second portion (24) extending substantially perpendicular to the sealing face (4) of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width (W) of the groove mouth (20) is at least 94% of the diameter (D) of the O-ring.

    摘要翻译: 一种在两个配合部件(2)(6)之间具有O形环(12)的真空密封件(1)。 配合部件中的一个具有构造成接收O形环(12)的凹槽(10)。 所述凹槽(10)具有改进的燕尾形状,其中至少一个侧壁(14)具有形成有相对于底壁(18)形成小于90度的角度的第一部分(22)的复合斜面,并且 第二部分(24)基本上垂直于配合部分的密封面(4)延伸。 槽的横截面积小于O形环的横截面面积的95%,并且槽口(20)的宽度(W)至少为直径(D)的94% -环。

    Non-planar sputter targets having crystallographic orientations promoting uniform deposition
    2.
    发明申请
    Non-planar sputter targets having crystallographic orientations promoting uniform deposition 审中-公开
    具有促进均匀沉积的晶体取向的非平面溅射靶

    公开(公告)号:US20060076234A1

    公开(公告)日:2006-04-13

    申请号:US10526702

    申请日:2003-09-12

    IPC分类号: C23C14/00

    摘要: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface (25) that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome (22) end of the sputter target (20) is comprised of a first crystallographic orientation and sidewalls (24) of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (α, β1, β2) in the target.

    摘要翻译: 公开了一种在溅射靶表面(25)的部分中具有不同晶体取向的非平面溅射靶,其促进从靶表面溅射到衬底上的更理想的沉积和密度图案。 溅射靶(20)的封闭圆顶(22)端部由第一结晶取向组成,溅射靶的侧壁(24)由不同于圆顶的晶体取向构成。 优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。 液压成形操作导致不同的晶体取向,同时最小化或理想地省略了热的应用。 因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。 目标中有载体(alpha,beta1,beta2)。

    Replaceable target sidewall insert with texturing
    6.
    发明申请
    Replaceable target sidewall insert with texturing 审中-公开
    可更换的目标侧壁插入物与纹理

    公开(公告)号:US20050161322A1

    公开(公告)日:2005-07-28

    申请号:US10512304

    申请日:2003-03-26

    申请人: David Smathers

    发明人: David Smathers

    IPC分类号: C23C14/34 C23C14/35 H01J37/34

    CPC分类号: H01J37/3435 C23C14/3407

    摘要: This invention provides a sputter target (30) and backing plate (60) assembly having a replaceable sputter target sidewall insert (10). The replaceable sidewall insert (10) enhances the effectiveness and useful life of the assembly by replacing only the insert portion of the sidewall (10) when needed, while retaining the remaining portions of the target (30) for additional use. The sidewall insert (10) is secured to the target (30) and backing plate (60) in corresponding grooves (66) provided in the target (30) and backing plate (60). A textured surface (16) such as a continuous textured coating may be applied to the sidewall insert (10) to further enhance particle retention properties of the target/backing plate assembly.

    摘要翻译: 本发明提供一种具有可替换的溅射靶侧壁插入件(10)的溅射靶(30)和背板(60)组件。 可替换的侧壁插入件(10)通过在需要时仅替换侧壁(10)的插入部分同时保持目标(30)的剩余部分用于额外使用而增强了组件的有效性和使用寿命。 侧壁插入件(10)在设置在靶(30)和背板(60)中的相应凹槽(66)中固定到靶(30)和背板(60)。 诸如连续织构化涂层的纹理表面(16)可以施加到侧壁插入件(10),以进一步增强靶/背板组件的颗粒保持性能。

    Variable thickness plate for forming variable wall thickness physical vapor deposition target
    7.
    发明申请
    Variable thickness plate for forming variable wall thickness physical vapor deposition target 失效
    用于形成可变壁厚物理气相沉积靶的可变厚度板

    公开(公告)号:US20070007131A1

    公开(公告)日:2007-01-11

    申请号:US11443232

    申请日:2006-05-30

    IPC分类号: C23C14/00

    摘要: A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.

    摘要翻译: 一种可变厚度溅射靶,其在战略位置增加目标材料厚度,以大大提高每个靶材的可用晶片的产量,以及制造这种靶材的方法,包括形成大致平坦且圆形的靶坯料,使得顶部之间的厚度尺寸 并且底面随目标空白半径的函数而减小。 然后将可变厚度目标坯料形成为具有底部和侧壁部分的可变厚度的圆顶形目标构件,其中所述可变厚度的圆顶形目标构件的壁厚在所述底部的中心部分附近最厚。 在本发明的一个实施例中,可变厚度目标坯料通过用加盖辊轧制(或压缩)目标坯料来形成,以获得可变厚度目标坯料。

    Process for making dense mixed metal si3n4 targets
    8.
    发明申请
    Process for making dense mixed metal si3n4 targets 有权
    制备密集混合金属si3n4靶材的工艺

    公开(公告)号:US20060166010A1

    公开(公告)日:2006-07-27

    申请号:US10527513

    申请日:2003-08-27

    IPC分类号: C04B35/587 B28B1/00 B32B13/04

    摘要: A composition and method for fabricating high-density Ta—Al—O, Ta—Si—N, and W—Si—N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.

    摘要翻译: 用于制造高密度Ta-Al-O,Ta-Si-N和W-Si-N溅射靶的组合物和方法,对于用于喷墨打印机的加热器层的溅射特别有用。 根据本发明的组合物包含金属组分Si 3 N 4 S和烧结助剂,使得靶材将成功地溅射而不会破裂等。组分被组合 粉末形式和压力在加热条件下固化足以形成具有大于理论密度的约95%的实际密度的固结共混物的时间。 然后可以加工固结的混合物以提供最终期望的目标形状。