公开(公告)号：US06326601B1

公开(公告)日：2001-12-04

申请号：US09356560

申请日：1999-07-19

申请人： David W Hula ,  Philip G. Nikkel

发明人： David W Hula ,  Philip G. Nikkel

IPC分类号： H01L3102

CPC分类号： H01L27/14625 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography processing steps and hydrogen peroxide as an etchant. The patterned optical barrier material acts as a light-shielding layer over a light-sensing device to form a dark reference device or dark pixel.

摘要翻译： 由钨（W）或钛 - 钨（TiW）制成的光学屏障。 光学阻挡材料层沉积在诸如氧化铟锡（ITO）的透明层上。 然后使用光刻处理步骤和过氧化氢作为蚀刻剂将光阻挡材料图案化。 图案化光阻挡材料用作光感测装置上的遮光层，以形成暗参考装置或暗像素。

公开(公告)号：US06646346B1

公开(公告)日：2003-11-11

申请号：US09698459

申请日：2000-10-27

申请人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

发明人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

IPC分类号： H01L2348

CPC分类号： H01L23/564 ,  H01L21/32051 ,  H01L21/76828 ,  H01L21/76886 ,  H01L23/3171 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。

公开(公告)号：US06455836B1

公开(公告)日：2002-09-24

申请号：US09558461

申请日：2000-04-25

申请人： David W Hula

发明人： David W Hula

IPC分类号： H01J4014

CPC分类号： H01L27/1446 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： The number of masking operations needed to connect photo-return current to ground or a bias potential can be reduced by collecting and rearranging the conventional steps to become: (A) Depositing a P layer of hydrogenated amorphous silicon (a-Si:H) upon an underlying layer of intrinsic hydrogenated amorphous silicon, and a layer of conductive ITO on top of the P layer; (B) Patterning all three of the layers deposited in step (A); and (C) Depositing and then patterning the layer of W that serves as the optical barrier. The above steps (A)-(C) require only two masking operations, in comparison to three for the conventional method. In addition, the W layer can be used to connect the ITO to ground or the bias potential.

摘要翻译： 通过收集和重新排列常规步骤可以减少将光电返回电流连接到地面或偏置电位所需的掩模操作次数，以成为：（A）将氢化非晶硅（a-Si：H）的P层沉积在 本征氢化非晶硅的下层和在P层顶部的导电ITO层;（B）对步骤（A）中沉积的所有三个层进行图案化; 和（C）对作为光学屏障的W层进行沉积然后构图。上述步骤（A） - （C）仅需要两个屏蔽操作，与常规方法相比，三个掩模操作。 此外，W层可用于将ITO连接到接地或偏置电位。

公开(公告)号：US06903017B2

公开(公告)日：2005-06-07

申请号：US10648735

申请日：2003-08-26

申请人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

发明人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/564 ,  H01L21/32051 ,  H01L21/76828 ,  H01L21/76886 ,  H01L23/3171 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。