摘要:
A device and related fabrication method is provided for an organic/inorganic hybrid optical amplifier with a function of converting infrared light to visible light. The hybrid device integrates an inorganic heterojunction phototransistor (HPT), an embedded metal electrode mirror with a dual function as an optical mirror and charge injection electrode, and an organic light emitting diode (OLED). This integrated optical amplifier is capable of amplifying the incoming light and producing light emission with a power greater than that of the incoming signal. In the second aspect of the invention, the optical amplifier is capable of detecting an incoming infrared electromagnetic wave and converting the wave back to a visible light wave. The optical device has dual functions of optical power amplification and photon energy up-conversion. The optical amplifier device consists of an InGaAs/InP based HPT structure as photodetector, gold-coated metals as embedded mirror and a top-emission OLED. New optical up-conversion imaging devices are also provided that include focal-point array of the organic/inorganic hybrid optical amplifier devices in pixelated formats. The up-conversion imaging devices have a fast response time to enable gated operation for practical applications such as night vision, active surveillance, semiconductor wafer inspection and eye-safe infrared imaging. More importantly, the up-conversion imaging devices would be particularly useful for detecting ultra-low intensity infrared scenes.
摘要:
A device and related fabrication method is provided for an organic/inorganic hybrid optical amplifier with a function of converting infrared light to visible light. The hybrid device integrates an inorganic heterojunction phototransistor (HPT), an embedded metal electrode mirror with a dual function as an optical mirror and charge injection electrode, and an organic light emitting diode (OLED). This integrated optical amplifier is capable of amplifying the incoming light and producing light emission with a power greater than that of the incoming signal. In the second aspect of the invention, the optical amplifier is capable of detecting an incoming infrared electromagnetic wave and converting the wave back to a visible light wave. The optical device has dual functions of optical power amplification and photon energy up-conversion. The optical amplifier device consists of an InGaAs/InP based HPT structure as photodetector, gold-coated metals as embedded mirror and a top-emission OLED. New optical up-conversion imaging devices are also provided that include focal-point array of the organic/inorganic hybrid optical amplifier devices in pixelated formats. The up-conversion imaging devices have a fast response time to enable gated operation for practical applications such as night vision, active surveillance, semiconductor wafer inspection and eye-safe infrared imaging. More importantly, the up-conversion imaging devices would be particularly useful for detecting ultra-low intensity infrared scenes.
摘要:
A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.
摘要:
A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.
摘要:
A quantum well optoelectronic device exploiting the multistability of the light-current characteristic of a multiple quantum well structure to achieve complex manipulation of the optical output of a light-emitting channel. Intraband tunneling of each of two distinct carrier types gives rise to a nonlinear dependence of optical gain on injected current.
摘要:
There is described a cascade-type compact hybrid energy cell (CHEC) that is capable of individually and concurrently harvesting solar, strain and thermal energies. The cell comprises an n-p homojunction nanowire (NW)-based piezoelectric nanogenerator and a nanocrystalline/amorphous-Si:H single junction cell. Under optical illumination of ˜10 mW/cm2 and mechanical vibration of 3 m/s2 at 3 Hz frequency, the output current and voltage from a single 1.0 cm2-sized CHEC was found to be 280 μA and 3.0 V, respectively—this is are sufficient to drive low-power commercial electronics. Six such CHECs connected in series were found to generate enough electrical power to light emitting diodes or drive a wireless strain gauge sensor node.