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144 条记录 (耗时 0.026 秒)

    Buried back reflector
    1.
    发明授权
    Buried back reflector 有权

    公开(公告)号：US12001120B1

    公开(公告)日：2024-06-04

    申请号：US17556323

    申请日：2021-12-20

    申请人： HyperLight Corporation

    发明人： Mian Zhang ,  Kevin Luke ,  Prashanta Kharel ,  Christian Reimer ,  Lingyan He

    IPC分类号： G02F1/313

    CPC分类号： G02F1/313 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2202/101 ,  G02F2202/20

    摘要： An optical device including a plurality of electrodes, an electro-optic component, an optical grating, and a buried back reflector is described. The electro-optic component includes at least one optical material exhibiting an electro-optic effect. The optical grating is optically coupled with the electro-optic component. In some embodiments, the optical grating includes a vertical optical grating coupler. The buried back reflector is optically coupled with the optical grating. The buried back reflector is configured to increase a coupling efficiency of the optical grating to an out-of-plane optical mode and configured to reduce a performance perturbation to the plurality of electrodes. The buried back reflector may include a metal layer having a thickness of at least thirty nanometers and not more than five hundred nanometers.

    Terahertz Mixer and Optical Fiber Coupled Terahertz Mixer
    7.
    发明申请
    Terahertz Mixer and Optical Fiber Coupled Terahertz Mixer 审中-公开
    太赫兹混频器和光纤耦合太赫兹混频器

    公开(公告)号：US20150248047A1

    公开(公告)日：2015-09-03

    申请号：US14632526

    申请日：2015-02-26

    申请人： The University of Manchester

    发明人： Subhasish CHAKRABORTY

    IPC分类号： G02F1/35 ,  G02F1/377 ,  G02B27/42 ,  G02F1/365 ,  G02F1/355

    CPC分类号： G02F1/353 ,  G02B27/4244 ,  G02F1/3534 ,  G02F1/3544 ,  G02F1/3556 ,  G02F1/365 ,  G02F1/377 ,  G02F2001/354 ,  G02F2001/3546 ,  G02F2201/30 ,  G02F2202/101 ,  G02F2203/13 ,  H01S5/0623 ,  H01S5/3402 ,  H04B10/50 ,  H04B10/90

    摘要： A tunable mixer comprising: a solid state device formed of a (non-linear) material having a second or higher order electrical susceptibility, and configured to receive an input light signal having a principle modal frequency; and a grating, provided as a series of a plurality of grating elements, arranged to provide distributed feedback within the device such that the mixer is electrically controllable: to add, relative to the principle modal frequency, a sideband mode to the input light signal at any selected one of at least two respective sideband modal frequencies; and to output the resulting signal.

    摘要翻译： 一种可调混合器，包括：由具有第二或更高阶电磁敏度的（非线性）材料形成的固态器件，并且被配置为接收具有主要模态频率的输入光信号; 以及光栅，被提供为一系列多个光栅元件，被布置成在所述器件内提供分布式反馈，使得所述混频器是电可控的：相对于所述主模式频率，将边带模式加到所述输入光信号 至少两个相应的边带模态频率中的任何一个选择的一个; 并输出结果信号。

    Optical device including three coupled quantum well structure
    8.
    发明授权
    Optical device including three coupled quantum well structure 有权
    光器件包括三个耦合的量子阱结构

    公开(公告)号：US09082909B2

    公开(公告)日：2015-07-14

    申请号：US14148009

    申请日：2014-01-06

    申请人： SAMSUNG ELECTRONICS CO., LTD. ,  GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Yong-chul Cho ,  Yong-tak Lee ,  Chang-young Park ,  Byung-hoon Na ,  Yong-hwa Park ,  Gun-wu Ju ,  Hee-ju Chio

    IPC分类号： H01L31/0352

    CPC分类号： H01L31/035209 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2202/101

    摘要： Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

    摘要翻译： 提供了一种光学器件，其包括有源层，该有源层包括至少两个外部屏障和至少一个耦合量子阱，所述至少一个耦合量子阱中的每一个被夹在所述至少两个外部屏障之间。 所述至少一个耦合量子阱中的每一个包括至少三个量子阱层和插入在所述至少三个量子层之间的至少两个耦合屏障。 所述至少两个耦合屏障具有高于地平面并且低于所述至少两个外部屏障的能量水平的势能。

    SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体光波导器件及其制造方法

    公开(公告)号：US20140254998A1

    公开(公告)日：2014-09-11

    申请号：US14198261

    申请日：2014-03-05

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Akira FURUYA ,  Takamitsu KITAMURA ,  Hideki YAGI ,  Naoya KONO

    IPC分类号： G02B6/42 ,  G02B6/136

    CPC分类号： G02B6/305 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12078 ,  G02F1/01708 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2001/217 ,  G02F2201/04 ,  G02F2201/06 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2202/108

    摘要： A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.

    摘要翻译： 半导体光波导器件包括具有第一区域和第二区域的衬底以及衬底上的第一，第二和第二半导体台面。 第一半导体台面包括在第二区域上的包覆层和第一台面部分，第一台面部分包括第一和第二部分。 第二半导体台面分别包括中间层，第一芯层以及第一和第二区域上的第一和第二台面部分。 第三半导体台面包括第二芯层，第一和第二台面部分的宽度大于第二半导体台面的宽度。 第一半导体台面的第一部分具有与第二半导体台面的第二台面部分基本相同的宽度。 第一芯层通过设置在第一和第二芯层之间的中间层光耦合到第二芯层。