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1.发明授权Resized wafer with a negative photoresist ring and design structures thereof 有权具有负光致抗蚀剂环的尺寸调整晶片及其设计结构公开(公告)号：US08536025B2
公开(公告)日：2013-09-17
申请号：US13316978
申请日：2011-12-12
IPC分类号： H01L21/46 , H01L21/301
CPC分类号： H01L21/76838 , H01L21/302 , H01L21/3083
摘要： A resized wafer using a negative photoresist ring, methods of manufacture and design structures thereof are disclosed. The method includes forming a ring within a radius of a wafer. The method also includes patterning a photoresist formed on the wafer, by exposing the photoresist to energy. Additionally, the method includes forming troughs in a substrate of the wafer based on the patterning of the photoresist, wherein the ring blocks formation of the troughs underneath the ring. The method also includes filling the troughs with a metal and resizing the wafer at an area of the ring.
摘要翻译： 公开了使用负型光致抗蚀剂环的尺寸调整的晶片，其制造方法和设计结构。 该方法包括在晶片的半径内形成环。 该方法还包括通过将光致抗蚀剂暴露于能量来图案化形成在晶片上的光致抗蚀剂。 另外，该方法包括基于光刻胶的图案形成在晶片的衬底中形成槽，其中环阻挡环下方的槽的形成。 该方法还包括用金属填充槽并且在环的区域上调整晶片大小。
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公开(公告)号：US5441797A
公开(公告)日：1995-08-15
申请号：US315801
申请日：1994-09-30
IPC分类号： C08G73/10 , C08K5/3437 , C08L77/00 , C08L79/08 , G03F7/09 , G03F7/11 , H01L21/027 , B32B9/00
CPC分类号： G03F7/091 , Y10S428/901 , Y10S430/11 , Y10T428/24917 , Y10T428/31692 , Y10T428/31721
摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. C. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.
摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。
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公开(公告)号：US5539080A
公开(公告)日：1996-07-23
申请号：US424986
申请日：1995-04-19
IPC分类号： C08G73/10 , C08K5/3437 , C08L77/00 , C08L79/08 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091 , Y10S428/901 , Y10S430/11 , Y10T428/24917 , Y10T428/31692 , Y10T428/31721
摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.
摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。
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公开(公告)号：US5998569A
公开(公告)日：1999-12-07
申请号：US42655
申请日：1998-03-17
申请人： Dennis P. Hogan , Harold G. Linde
发明人： Dennis P. Hogan , Harold G. Linde
CPC分类号： C08G73/14
摘要： A composition of matter comprising a polyamic acid/ester having an amide pendant group directly substituting an acid site of the polyamic acid is provided, which composition when cured provides a colored polymer film when the amide group is a chromophore. The resulting polymer which may be applied as a film to semiconductor chips to provide an optically sensitive semiconductor chip comprises a partially imidized polyamic acid wherein an amide pendant group is directly attached to one acid moiety of the polyamic acid and the other acid group imidized with the adjacent amino group of the polyamic acid. The polymers are useful as optical filters on semiconductor chips and for photoresist applications.
摘要翻译： 提供了包含具有直接取代聚酰胺酸的酸性部位的酰胺侧基的聚酰胺酸/酯的组合物，当酰胺基为发色团时，固化时的组成为着色聚合物膜。 可以作为膜施加到半导体芯片以提供光敏半导体芯片的所得聚合物包括部分酰亚胺化的聚酰胺酸，其中酰胺侧基直接连接到聚酰胺酸的一个酸部分，另一个酸基被酰亚胺化 聚酰胺酸的相邻氨基。 这些聚合物可用作半导体芯片和光致抗蚀剂应用上的滤光器。
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公开(公告)号：US5536792A
公开(公告)日：1996-07-16
申请号：US423478
申请日：1995-04-19
IPC分类号： C08G73/10 , C08K5/3437 , C08L77/00 , C08L79/08 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091 , Y10S428/901 , Y10S430/11 , Y10T428/24917 , Y10T428/31692 , Y10T428/31721
摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.
摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。
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公开(公告)号：US06348100B1
公开(公告)日：2002-02-19
申请号：US09346218
申请日：1999-07-01
IPC分类号： B08B312
CPC分类号： B08B3/12 , C11D7/265 , C11D11/0047
摘要： A method of processing a substrate. A polymer is applied to a substrate. A portion of the polymer is not retained on the substrate and is collected by a catch basin. The catch basin is cleaned by exposing the catch basin and collected polymer to a material comprising acetic acid.
摘要翻译： 一种处理衬底的方法。 将聚合物施加到基底上。 聚合物的一部分不保留在基底上并且被捕获池收集。 通过将捕获池和收集的聚合物暴露于包含乙酸的材料来清洁捕获池。
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公开(公告)号：US5397684A
公开(公告)日：1995-03-14
申请号：US54500
申请日：1993-04-27
IPC分类号： C08G73/10 , C08K5/3437 , C08L77/00 , C08L79/08 , G03F7/09 , G03F7/11 , H01L21/027 , G03C5/00
CPC分类号： G03F7/091 , Y10S428/901 , Y10S430/11 , Y10T428/24917 , Y10T428/31692 , Y10T428/31721
摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.
摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。
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