公开(公告)号：US5754089A

公开(公告)日：1998-05-19

申请号：US822665

申请日：1997-03-24

Applicant: Der-Cheng Chen ,  Peng-Cheng Chou

Inventor： Der-Cheng Chen ,  Peng-Cheng Chou

IPC: H01L23/525 ,  H01H85/046

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  Y10S148/055

Abstract: A fuse structure is described in which a metallic frame is inserted between the insulation layers, through which the fuse window passes, and the final passivation layer. This frame is used as a mask during fuse window formation so alignment is simplified and problems arising from the presence of insulating residues on the surface of the fuse window layer are avoided.

Abstract translation: 描述了一种熔丝结构，其中金属框架插入在熔丝窗通过的绝缘层和最终钝化层之间。 在保险丝窗口形成期间，该框架用作掩模，因此简化了对准，并避免了在熔丝窗口层的表面上存在绝缘残留物所引起的问题。

公开(公告)号：US5652175A

公开(公告)日：1997-07-29

申请号：US684071

申请日：1996-07-19

Applicant: Der-Cheng Chen ,  Peng-Cheng Chou

Inventor： Der-Cheng Chen ,  Peng-Cheng Chou

IPC: H01L23/525 ,  H01L21/70 ,  H01L27/00

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  Y10S148/055

Abstract: A fuse structure is described in which a metallic frame is inserted between the insulation layers, through which the fuse window passes, and the final passivation layer. This frame is used as a mask during fuse window formation so alignment is simplified and problems arising from the presence of insulating residues on the surface of the fuse window layer are avoided.

Abstract translation: 描述了一种熔丝结构，其中金属框架插入在熔丝窗通过的绝缘层和最终钝化层之间。 在保险丝窗口形成期间，该框架用作掩模，因此简化了对准，并避免了在熔丝窗口层的表面上存在绝缘残留物所引起的问题。

公开(公告)号：US5899741A

公开(公告)日：1999-05-04

申请号：US40432

申请日：1998-03-18

Applicant: Fouriers Tseng ,  Peng-Cheng Chou

Inventor： Fouriers Tseng ,  Peng-Cheng Chou

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76862 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76877

Abstract: A new method of forming an amorphous silicon glue layer in the formation of a contact is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. An amorphous silicon layer is deposited overlying the insulating layer and within the opening. Ions are implanted into the amorphous silicon layer whereby grain sizes within the amorphous silicon layer are reduced. Native oxide on the surface of the amorphous silicon layer is removed. A titanium/titanium nitride layer is deposited overlying the amorphous silicon layer. A metal layer is deposited overlying the titanium/titanium nitride layer and filling the opening. The substrate is annealed whereby the titanium layer reacts with the amorphous silicon layer and the silicon semiconductor substrate to form titanium silicide. The metal layer is etched back or patterned to complete metallization in the fabrication of an integrated circuit device.

Abstract translation: 描述了在形成接触时形成非晶硅胶层的新方法。 半导体器件结构设置在半导体衬底中和半导体衬底上。 绝缘层沉积在半导体器件结构上。 通过绝缘层蚀刻开口以接触半导体器件结构之一。 非晶硅层沉积在绝缘层上并且在开口内。 将离子注入到非晶硅层中，由此减小非晶硅层内的晶粒尺寸。 去除非晶硅层表面上的天然氧化物。 覆盖在非晶硅层上的钛/氮化钛层被沉积。 沉积覆盖在钛/氮化钛层上并填充开口的金属层。 将衬底退火，由此钛层与非晶硅层和硅半导体衬底反应形成硅化钛。 金属层被回蚀或图案化以在集成电路器件的制造中完成金属化。