公开(公告)号：US08357985B2

公开(公告)日：2013-01-22

申请号：US13350582

申请日：2012-01-13

申请人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

发明人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

IPC分类号： H01L29/02

CPC分类号： H01L29/7322 ,  H01L21/76283 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/66272

摘要： A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

摘要翻译： 包括发射极区域，基极区域和集电极区域的双极晶体管以及与基极隔开并围绕基极的保护区域。 保护区域可以形成在形成基底的相同步骤中，并且可以用于在操作中扩散耗尽层。

公开(公告)号：US20120112307A1

公开(公告)日：2012-05-10

申请号：US13350582

申请日：2012-01-13

申请人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

发明人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

IPC分类号： H01L29/06

CPC分类号： H01L29/7322 ,  H01L21/76283 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/66272

摘要： A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

摘要翻译： 包括发射极区域，基极区域和集电极区域的双极晶体管以及与基极隔开并围绕基极的保护区域。 保护区域可以形成在形成基底的相同步骤中，并且可以用于在操作中扩散耗尽层。

公开(公告)号：US08390039B2

公开(公告)日：2013-03-05

申请号：US12611055

申请日：2009-11-02

申请人： Derek Frederick Bowers ,  Andrew David Bain ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

发明人： Derek Frederick Bowers ,  Andrew David Bain ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

IPC分类号： H01L29/80

CPC分类号： H01L29/808 ,  H01L29/0843 ,  H01L29/66901

摘要： A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

摘要翻译： 一种具有漏极，栅极和源极的场效应晶体管，其中漏极和源极由第一类型的半导体区域形成，并且其中在栅极和漏极之间设置另外的掺杂区域。 从而减少排水管周围的场梯度。

公开(公告)号：US08193046B2

公开(公告)日：2012-06-05

申请号：US12611052

申请日：2009-11-02

申请人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

发明人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

IPC分类号： H01L21/337

CPC分类号： H01L29/808 ,  H01L29/0843 ,  H01L29/66901

摘要： A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

摘要翻译： 具有漏极和源极的结型场效应晶体管，每个由通过沟道互连的第一类型半导体的区域限定，并且其中面向沟道的漏极侧的掺杂剂分布被修改以提供区域 与漏极的体区相比减少掺杂。 减少掺杂的区域和体区可以通过相同的掩模和掺杂步骤来限定，但是掩模被成形为为减少掺杂的区域提供较少量的掺杂深度。

公开(公告)号：US08350352B2

公开(公告)日：2013-01-08

申请号：US12611074

申请日：2009-11-02

申请人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

发明人： William Allan Lane ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson

IPC分类号： H01L29/02

CPC分类号： H01L29/7322 ,  H01L21/76283 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/66272

摘要： A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

摘要翻译： 包括发射极区域，基极区域和集电极区域的双极晶体管以及与基极隔开并围绕基极的保护区域。 保护区域可以形成在形成基底的相同步骤中，并且可以用于在操作中扩散耗尽层。

公开(公告)号：US08513713B2

公开(公告)日：2013-08-20

申请号：US13468809

申请日：2012-05-10

申请人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

发明人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

IPC分类号： H01L29/80

CPC分类号： H01L29/808 ,  H01L29/0843 ,  H01L29/66901

摘要： A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

摘要翻译： 具有漏极和源极的结型场效应晶体管，每个由通过沟道互连的第一类型半导体的区域限定，并且其中面向沟道的漏极侧的掺杂剂分布被修改以提供区域 与漏极的体区相比减少掺杂。 减少掺杂的区域和体区可以通过相同的掩模和掺杂步骤来限定，但是掩模被成形为为减少掺杂的区域提供较少量的掺杂深度。

公开(公告)号：US20110101424A1

公开(公告)日：2011-05-05

申请号：US12611052

申请日：2009-11-02

申请人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

发明人： Paul Malachy Daly ,  Andrew David Bain ,  Derek Frederick Bowers ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

IPC分类号： H01L29/808 ,  H01L21/337

CPC分类号： H01L29/808 ,  H01L29/0843 ,  H01L29/66901

摘要： A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

摘要翻译： 具有漏极和源极的结型场效应晶体管，每个由通过沟道互连的第一类型半导体的区域限定，并且其中面向沟道的漏极侧的掺杂剂分布被修改以提供区域 与漏极的体区相比减少掺杂。 减少掺杂的区域和体区可以通过相同的掩模和掺杂步骤来限定，但是掩模被成形为为减少掺杂的区域提供较少量的掺杂深度。

公开(公告)号：US20110101423A1

公开(公告)日：2011-05-05

申请号：US12611055

申请日：2009-11-02

申请人： Derek Frederick Bowers ,  Andrew David Bain ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

发明人： Derek Frederick Bowers ,  Andrew David Bain ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuinness ,  Bernard Patrick Stenson ,  William Allan Lane

IPC分类号： H01L29/80 ,  H01L21/335

CPC分类号： H01L29/808 ,  H01L29/0843 ,  H01L29/66901

摘要： A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

摘要翻译： 一种具有漏极，栅极和源极的场效应晶体管，其中漏极和源极由第一类型的半导体区域形成，并且其中在栅极和漏极之间设置另外的掺杂区域。 从而减少排水管周围的场梯度。

公开(公告)号：US20120028432A1

公开(公告)日：2012-02-02

申请号：US13267780

申请日：2011-10-06

申请人： Bernard Patrick Stenson ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuiness ,  William Allan Lane

发明人： Bernard Patrick Stenson ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuiness ,  William Allan Lane

IPC分类号： H01L21/8222 ,  H01L21/331

CPC分类号： H01L29/0821 ,  H01L21/8222 ,  H01L29/66272 ,  H01L29/7317 ,  H01L29/7322

摘要： A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

摘要翻译： 一种双极晶体管，包括集电极，基极和发射极，其中集电极包括相对重掺杂的区域，以及与基极相邻的较轻掺杂的区域，并且其中相对重掺杂的区域基本上从本征区域中省略 的晶体管。

公开(公告)号：US08058704B2

公开(公告)日：2011-11-15

申请号：US12611068

申请日：2009-11-02

申请人： Bernard Patrick Stenson ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuiness ,  William Allan Lane

发明人： Bernard Patrick Stenson ,  Andrew David Bain ,  Derek Frederick Bowers ,  Paul Malachy Daly ,  Anne Maria Deignan ,  Michael Thomas Dunbar ,  Patrick Martin McGuiness ,  William Allan Lane

IPC分类号： H01L29/02

CPC分类号： H01L29/0821 ,  H01L21/8222 ,  H01L29/66272 ,  H01L29/7317 ,  H01L29/7322

摘要： A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

摘要翻译： 一种双极晶体管，包括集电极，基极和发射极，其中集电极包括相对重掺杂的区域，以及与基极相邻的较轻掺杂的区域，并且其中相对重掺杂的区域基本上从本征区域中省略 的晶体管。